TPH3202LD Transphorm

Description: GANFET N-CH 600V 9A 4PQFN, Packaging: Tube, Package / Case: 4-PowerDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 5.5A, 8V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 4-PQFN (8x8), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 480 V.