UPA1476H-AZ Renesas Electronics Corporation


NECCS05671-1.pdf?t.download=true&u=5oefqw Виробник: Renesas Electronics Corporation
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Package / Case: 10-SIP
Mounting Type: Through Hole
Transistor Type: 4 NPN Darlington (Quad)
Operating Temperature: 150°C (TJ)
Power - Max: 3.5W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 115V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Supplier Device Package: 10-SIP
на замовлення 2546 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
130+153.27 грн
Мінімальне замовлення: 130
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Технічний опис UPA1476H-AZ Renesas Electronics Corporation

Description: POWER BIPOLAR TRANSISTOR NPN, Packaging: Bulk, Package / Case: 10-SIP, Mounting Type: Through Hole, Transistor Type: 4 NPN Darlington (Quad), Operating Temperature: 150°C (TJ), Power - Max: 3.5W, Current - Collector (Ic) (Max): 2A, Voltage - Collector Emitter Breakdown (Max): 115V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V, Supplier Device Package: 10-SIP.