VS-100BGQ100-N4 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOTT 100V 100A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1320pF @ 5V, 1MHz
Current - Average Rectified (Io): 100A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
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Технічний опис VS-100BGQ100-N4 Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 100V 100A POWIRTAB, Packaging: Bulk, Package / Case: PowerTab®, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 1320pF @ 5V, 1MHz, Current - Average Rectified (Io): 100A, Supplier Device Package: PowerTab®, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 100 A, Current - Reverse Leakage @ Vr: 300 µA @ 100 V.