WMK09N90C2 WAYON
Виробник: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.16Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 225ns
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.16Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 225ns
Heatsink thickness: 1.2...1.45mm
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.43 грн |
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Технічний опис WMK09N90C2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W, Type of transistor: N-MOSFET, Technology: WMOS™ C2, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 4.8A, Pulsed drain current: 16A, Power dissipation: 85W, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 1.16Ω, Mounting: THT, Gate charge: 18nC, Kind of package: tube, Kind of channel: enhanced, Reverse recovery time: 225ns, Heatsink thickness: 1.2...1.45mm.