ZVP2120GTC Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 200V 200MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
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Технічний опис ZVP2120GTC Diodes Incorporated
Description: MOSFET P-CH 200V 200MA SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 25Ohm @ 150mA, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 3.5V @ 1mA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Drain to Source Voltage (Vdss): 200 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V.