Продукція > SANKEN ELECTRIC USA INC. > Всі товари виробника SANKEN ELECTRIC USA INC. (831) > Сторінка 3 з 14
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AL01ZV0 | Sanken Electric USA Inc. |
 Description: DIODE GEN PURP 200V 1A AXIALPackaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
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AL01ZV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 1A AXIAL Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
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AL01ZV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 1A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
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AL01ZWK | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 1A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
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AM01AWK | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 600V 1A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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| AOD2146 | Sanken Electric USA Inc. |
Description: 40V N-CHANNEL ALPHASGT Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V |
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AS01AWK | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 600V 600MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 600mA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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AU01AWK | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 600V 500MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 500mA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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AU01ZV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 500MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 500mA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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AU01ZV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 500MA AXIAL Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 500mA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 2431 шт: термін постачання 21-31 дні (днів) |
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AU02AV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 600V 800MA AXIAL Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 2880 шт: термін постачання 21-31 дні (днів) |
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AU02AV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 600V 800MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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AU02AWK | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 600V 800MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 800mA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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AU02V1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 800MA AXIAL Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 2297 шт: термін постачання 21-31 дні (днів) |
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AU02V1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 800MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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| BL0202B | Sanken Electric USA Inc. |
Description: LED DRIVER IC FOR LED BACKLIGHTS Packaging: Tape & Reel (TR) Package / Case: 18-SOIC (0.213", 5.40mm Width) Mounting Type: Surface Mount Number of Outputs: 4 Frequency: 100kHz Type: DC DC Controller Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight, Lighting Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: 18-SOP Dimming: Analog, PWM Voltage - Supply (Min): 8.6V Voltage - Supply (Max): 20V Part Status: Active |
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BR206 | Sanken Electric USA Inc. |
Description: DC DC CONVERTER 0.75-3.63V 73W Features: Remote On/Off, OCP Packaging: Tape & Reel (TR) Package / Case: 10-SMD Module Size / Dimension: 1.30" L x 0.53" W x 0.17" H (33.0mm x 13.5mm x 4.2mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 7V Efficiency: 94.6% Current - Output (Max): 20A Voltage - Input (Min): 4.5V Voltage - Output 1: 0.75 ~ 3.63V Control Features: Enable, Active High Power (Watts): 73 W Number of Outputs: 1 |
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BR206 | Sanken Electric USA Inc. |
Description: DC DC CONVERTER 0.75-3.63V 73W Features: Remote On/Off, OCP Packaging: Cut Tape (CT) Package / Case: 10-SMD Module Size / Dimension: 1.30" L x 0.53" W x 0.17" H (33.0mm x 13.5mm x 4.2mm) Mounting Type: Surface Mount Type: Non-Isolated PoL Module Operating Temperature: -40°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 7V Efficiency: 94.6% Current - Output (Max): 20A Voltage - Input (Min): 4.5V Voltage - Output 1: 0.75 ~ 3.63V Control Features: Enable, Active High Power (Watts): 73 W Number of Outputs: 1 |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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BR301 | Sanken Electric USA Inc. |
Description: DC DC CONVERTER 3.3V 3W Features: OCP, OTP Packaging: Bulk Package / Case: 4-DIP Module Size / Dimension: 0.55" L x 0.55" W x 0.39" H (14.0mm x 14.0mm x 10.0mm) Mounting Type: Through Hole Type: Non-Isolated PoL Module Operating Temperature: -20°C ~ 85°C Applications: ITE (Commercial) Voltage - Input (Max): 30V Efficiency: 87% Current - Output (Max): 1A Voltage - Input (Min): 8V Voltage - Output 1: 3.3V Power (Watts): 3 W Number of Outputs: 1 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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| CTNS-4606S | Sanken Electric USA Inc. |
Description: DIODE ARRAY GP 600V 60A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-3P Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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| CTXS-4603S | Sanken Electric USA Inc. |
Description: ULTRAFAST RECOVERY DIODE (FRAME) Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-3P Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 300 V |
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| CTXS-6603S | Sanken Electric USA Inc. |
Description: DIODE ARRAY GP 300V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 60A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 300 V |
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| DKG1020 | Sanken Electric USA Inc. |
Description: LOW RON & GATE THRESHOLD MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 42A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V |
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DKI04046 | Sanken Electric USA Inc. |
Description: MOSFET N-CH 40V 48A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 650µA Supplier Device Package: TO-252 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V |
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DKI04046 | Sanken Electric USA Inc. |
Description: MOSFET N-CH 40V 48A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 650µA Supplier Device Package: TO-252 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V |
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| EK 06 | Sanken Electric USA Inc. |
Description: DIODE SCHOTTKY 60V 700MA AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 700mA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 700 mA Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
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EL 1V1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 1.5A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1.5A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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EL 1V1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 1.5A AXIAL Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 1.5A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 1725 шт: термін постачання 21-31 дні (днів) |
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| EM1B | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 800V 1A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 800 V |
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| EM 1BV | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 800V 1A AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 800 V |
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| EM 1BV0 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 800V 1A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 800 V |
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EM 1BV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 800V 1A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 800 V |
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EM 1BV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 800V 1A AXIAL Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 800 V |
на замовлення 1706 шт: термін постачання 21-31 дні (днів) |
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| EM1C | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 1KV 1A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 1000 V |
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| EM 1CV | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 1KV 1A AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 1000 V |
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| EM 1CV0 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 1KV 1A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 1000 V |
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EM 1CV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 1KV 1A AXIAL Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 1000 V |
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EM 1CV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 1KV 1A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 20 µA @ 1000 V |
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EM 2BV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 800V 1.2A AXIAL Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1.2A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 1116 шт: термін постачання 21-31 дні (днів) |
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EM 2BV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 800V 1.2A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1.2A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
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EM 2V1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 1.2A AXIAL Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1.2A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 1247 шт: термін постачання 21-31 дні (днів) |
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EM 2V1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 1.2A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1.2A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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| ES 1F | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 1.5KV 500MA AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 500mA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 1500 V |
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| ES 1FV | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 1.5KV 500MA AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 500mA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 1500 V |
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| ES 1FV0 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 1.5KV 500MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 500mA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 1500 V |
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ES 1FV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 1.5KV 500MA AXIAL Packaging: Cut Tape (CT) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 500mA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 1500 V |
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ES 1FV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 1.5KV 500MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 500mA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 1500 V |
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| EU01 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 250MA AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 250mA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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| EU01V | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 250MA AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 250mA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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| EU01V0 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 250MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 250mA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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| EU01V1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 250MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 250mA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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| EU01W | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 250MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 250mA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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| EU01Z | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 250MA AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 250mA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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| EU01ZV | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 250MA AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 250mA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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| EU01ZV0 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 250MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 250mA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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| EU01ZV1 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 250MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 250mA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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| EU01ZW | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 250MA AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 250mA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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| EU02V0 | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 400V 1A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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| EU1Z | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 500MA AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 500mA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
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| EU 1ZV | Sanken Electric USA Inc. |
Description: DIODE GEN PURP 200V 500MA AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 500mA Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товар відсутній |
| AL01ZV0 |
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Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
| AL01ZV1 |
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Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
| AL01ZV1 |
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Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
| AL01ZWK |
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Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
товар відсутній
| AM01AWK |
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Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| AOD2146 |
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Виробник: Sanken Electric USA Inc.
Description: 40V N-CHANNEL ALPHASGT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V
Description: 40V N-CHANNEL ALPHASGT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V
товар відсутній
| AS01AWK |
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Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 600MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 600mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| AU01AWK |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| AU01ZV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
| AU01ZV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2431 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 58.26 грн |
| 10+ | 48.88 грн |
| 100+ | 33.85 грн |
| 500+ | 26.54 грн |
| AU02AV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 800MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 800MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 58.26 грн |
| 10+ | 48.88 грн |
| 100+ | 33.85 грн |
| 500+ | 26.54 грн |
| AU02AV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 800MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 800MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| AU02AWK |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 600V 800MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 800MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товар відсутній
| AU02V1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 800MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 800MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 2297 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 58.26 грн |
| 10+ | 48.88 грн |
| 100+ | 33.85 грн |
| 500+ | 26.54 грн |
| AU02V1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 800MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 800MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 800mA
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
| BL0202B |
|
Виробник: Sanken Electric USA Inc.
Description: LED DRIVER IC FOR LED BACKLIGHTS
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 100kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Lighting
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 18-SOP
Dimming: Analog, PWM
Voltage - Supply (Min): 8.6V
Voltage - Supply (Max): 20V
Part Status: Active
Description: LED DRIVER IC FOR LED BACKLIGHTS
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.213", 5.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 100kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight, Lighting
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 18-SOP
Dimming: Analog, PWM
Voltage - Supply (Min): 8.6V
Voltage - Supply (Max): 20V
Part Status: Active
товар відсутній
| BR206 |
|
Виробник: Sanken Electric USA Inc.
Description: DC DC CONVERTER 0.75-3.63V 73W
Features: Remote On/Off, OCP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD Module
Size / Dimension: 1.30" L x 0.53" W x 0.17" H (33.0mm x 13.5mm x 4.2mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 7V
Efficiency: 94.6%
Current - Output (Max): 20A
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.75 ~ 3.63V
Control Features: Enable, Active High
Power (Watts): 73 W
Number of Outputs: 1
Description: DC DC CONVERTER 0.75-3.63V 73W
Features: Remote On/Off, OCP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD Module
Size / Dimension: 1.30" L x 0.53" W x 0.17" H (33.0mm x 13.5mm x 4.2mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 7V
Efficiency: 94.6%
Current - Output (Max): 20A
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.75 ~ 3.63V
Control Features: Enable, Active High
Power (Watts): 73 W
Number of Outputs: 1
товар відсутній
| BR206 |
|
Виробник: Sanken Electric USA Inc.
Description: DC DC CONVERTER 0.75-3.63V 73W
Features: Remote On/Off, OCP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD Module
Size / Dimension: 1.30" L x 0.53" W x 0.17" H (33.0mm x 13.5mm x 4.2mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 7V
Efficiency: 94.6%
Current - Output (Max): 20A
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.75 ~ 3.63V
Control Features: Enable, Active High
Power (Watts): 73 W
Number of Outputs: 1
Description: DC DC CONVERTER 0.75-3.63V 73W
Features: Remote On/Off, OCP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD Module
Size / Dimension: 1.30" L x 0.53" W x 0.17" H (33.0mm x 13.5mm x 4.2mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 7V
Efficiency: 94.6%
Current - Output (Max): 20A
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.75 ~ 3.63V
Control Features: Enable, Active High
Power (Watts): 73 W
Number of Outputs: 1
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1329.68 грн |
| 5+ | 1270.48 грн |
| 10+ | 1260.59 грн |
| BR301 |
|
Виробник: Sanken Electric USA Inc.
Description: DC DC CONVERTER 3.3V 3W
Features: OCP, OTP
Packaging: Bulk
Package / Case: 4-DIP Module
Size / Dimension: 0.55" L x 0.55" W x 0.39" H (14.0mm x 14.0mm x 10.0mm)
Mounting Type: Through Hole
Type: Non-Isolated PoL Module
Operating Temperature: -20°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 30V
Efficiency: 87%
Current - Output (Max): 1A
Voltage - Input (Min): 8V
Voltage - Output 1: 3.3V
Power (Watts): 3 W
Number of Outputs: 1
Description: DC DC CONVERTER 3.3V 3W
Features: OCP, OTP
Packaging: Bulk
Package / Case: 4-DIP Module
Size / Dimension: 0.55" L x 0.55" W x 0.39" H (14.0mm x 14.0mm x 10.0mm)
Mounting Type: Through Hole
Type: Non-Isolated PoL Module
Operating Temperature: -20°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 30V
Efficiency: 87%
Current - Output (Max): 1A
Voltage - Input (Min): 8V
Voltage - Output 1: 3.3V
Power (Watts): 3 W
Number of Outputs: 1
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 244.67 грн |
| CTNS-4606S |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE ARRAY GP 600V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE ARRAY GP 600V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товар відсутній
| CTXS-4603S |
|
Виробник: Sanken Electric USA Inc.
Description: ULTRAFAST RECOVERY DIODE (FRAME)
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
Description: ULTRAFAST RECOVERY DIODE (FRAME)
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-3P
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
товар відсутній
| CTXS-6603S |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE ARRAY GP 300V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
Description: DIODE ARRAY GP 300V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 300 V
товар відсутній
| DKG1020 |
|
Виробник: Sanken Electric USA Inc.
Description: LOW RON & GATE THRESHOLD MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 42A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
Description: LOW RON & GATE THRESHOLD MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 42A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 10 V
товар відсутній
| DKI04046 |
|
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 40V 48A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
Description: MOSFET N-CH 40V 48A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
товар відсутній
| DKI04046 |
|
Виробник: Sanken Electric USA Inc.
Description: MOSFET N-CH 40V 48A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
Description: MOSFET N-CH 40V 48A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 35.4A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Supplier Device Package: TO-252
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 25 V
товар відсутній
| EK 06 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE SCHOTTKY 60V 700MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 700 mA
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 700MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 700 mA
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
товар відсутній
| EL 1V1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1.5A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1.5A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
| EL 1V1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1.5A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1.5A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1.5A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1725 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.06 грн |
| 10+ | 40.39 грн |
| 100+ | 27.96 грн |
| 500+ | 21.92 грн |
| 1000+ | 18.66 грн |
| EM1B |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товар відсутній
| EM 1BV |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товар відсутній
| EM 1BV0 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товар відсутній
| EM 1BV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товар відсутній
| EM 1BV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
на замовлення 1706 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 58.26 грн |
| 10+ | 48.88 грн |
| 100+ | 33.85 грн |
| 500+ | 26.54 грн |
| EM1C |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товар відсутній
| EM 1CV |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товар відсутній
| EM 1CV0 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товар відсутній
| EM 1CV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товар відсутній
| EM 1CV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 20 µA @ 1000 V
товар відсутній
| EM 2BV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1.2A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 1.2A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 1116 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 58.26 грн |
| 10+ | 48.88 грн |
| 100+ | 33.85 грн |
| 500+ | 26.54 грн |
| EM 2BV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1.2A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 1.2A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
| EM 2V1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1.2A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1.2A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 1247 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.53 грн |
| 10+ | 48.24 грн |
| 100+ | 33.41 грн |
| 500+ | 26.2 грн |
| 1000+ | 22.3 грн |
| EM 2V1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1.2A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1.2A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 12.35 грн |
| ES 1F |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товар відсутній
| ES 1FV |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товар відсутній
| ES 1FV0 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товар відсутній
| ES 1FV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товар відсутній
| ES 1FV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
Description: DIODE GEN PURP 1.5KV 500MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1500 V
товар відсутній
| EU01 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
| EU01V |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
| EU01V0 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
| EU01V1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
| EU01W |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
| EU01Z |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
| EU01ZV |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
| EU01ZV0 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
| EU01ZV1 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
| EU01ZW |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 250MA AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 250mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 250 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
| EU02V0 |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Box (TB)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
| EU1Z |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
| EU 1ZV |
|
Виробник: Sanken Electric USA Inc.
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 500MA AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній