Продукція > STARPOWER SEMICONDUCTOR LTD. > Всі товари виробника STARPOWER SEMICONDUCTOR LTD. (8) > Сторінка 1 з 1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| GD10PJY120F1S | STARPOWER SEMICONDUCTOR LTD. |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1 Case: F1.1 Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 20A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1200V |
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| GD10PJY120F4S | STARPOWER SEMICONDUCTOR LTD. |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1 Case: F4.1 Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 20A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1200V |
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| GD10PJY120L2S | STARPOWER SEMICONDUCTOR LTD. |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2 Case: L2.2 Collector current: 10A Gate-emitter voltage: ±20V Pulsed collector current: 20A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1200V |
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| GD25PJY120F2S | STARPOWER SEMICONDUCTOR LTD. |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0 Case: F2.0 Collector current: 25A Gate-emitter voltage: ±20V Pulsed collector current: 50A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1200V |
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| GD25PJY120F5S | STARPOWER SEMICONDUCTOR LTD. |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1 Case: F5.1 Collector current: 25A Gate-emitter voltage: ±20V Pulsed collector current: 50A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1200V |
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| GD35PJY120F2S | STARPOWER SEMICONDUCTOR LTD. |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0 Case: F2.0 Collector current: 35A Gate-emitter voltage: ±20V Pulsed collector current: 70A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1200V |
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| GD35PJY120F5S | STARPOWER SEMICONDUCTOR LTD. |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1 Case: F5.1 Collector current: 35A Gate-emitter voltage: ±20V Pulsed collector current: 70A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1200V |
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| GD400HFX170C2S | STARPOWER SEMICONDUCTOR LTD. |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A Case: C2 62mm Semiconductor structure: transistor/transistor Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: IGBT half-bridge Technology: Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1700V Collector current: 400A Gate-emitter voltage: ±20V Pulsed collector current: 800A |
товар відсутній |
| GD10PJY120F1S |
Виробник: STARPOWER SEMICONDUCTOR LTD.
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Case: F1.1
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F1.1
Case: F1.1
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
товар відсутній
| GD10PJY120F4S |
Виробник: STARPOWER SEMICONDUCTOR LTD.
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Case: F4.1
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F4.1
Case: F4.1
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
товар відсутній
| GD10PJY120L2S |
Виробник: STARPOWER SEMICONDUCTOR LTD.
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Case: L2.2
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L2.2
Case: L2.2
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
товар відсутній
| GD25PJY120F2S |
Виробник: STARPOWER SEMICONDUCTOR LTD.
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Case: F2.0
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Case: F2.0
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
товар відсутній
| GD25PJY120F5S |
Виробник: STARPOWER SEMICONDUCTOR LTD.
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Case: F5.1
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Case: F5.1
Collector current: 25A
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
товар відсутній
| GD35PJY120F2S |
Виробник: STARPOWER SEMICONDUCTOR LTD.
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Case: F2.0
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0
Case: F2.0
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
товар відсутній
| GD35PJY120F5S |
Виробник: STARPOWER SEMICONDUCTOR LTD.
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Case: F5.1
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1
Case: F5.1
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 70A
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Technology: Advanced Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1200V
товар відсутній
| GD400HFX170C2S |
Виробник: STARPOWER SEMICONDUCTOR LTD.
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Case: C2 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1700V
Collector current: 400A
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Case: C2 62mm
Semiconductor structure: transistor/transistor
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Technology: Trench FS IGBT
Type of module: IGBT
Max. off-state voltage: 1700V
Collector current: 400A
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
товар відсутній