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IXYA12N250CHVIXYSDescription: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
IXYA12N250CHVLittelfuseIGBT Transistors IGBT XPT
товар відсутній
IXYA15N65C3D1IXYSDescription: IGBT PT 650V 38A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 20 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXYA15N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
товар відсутній
IXYA15N65C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
кількість в упаковці: 1 шт
на замовлення 280 шт:
термін постачання 7-14 дні (днів)
2+211.56 грн
3+ 184.12 грн
7+ 140.68 грн
19+ 133.19 грн
Мінімальне замовлення: 2
IXYA15N65C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
на замовлення 280 шт:
термін постачання 21-30 дні (днів)
3+147.75 грн
7+ 117.23 грн
19+ 110.99 грн
Мінімальне замовлення: 3
IXYA20N120A4HVLittelfuse1200V IGBT Chip Transistor
товар відсутній
IXYA20N120A4HVIXYSDescription: DISC IGBT XPT-GENX4 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 800mV, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
1+719.64 грн
50+ 553.18 грн
100+ 494.96 грн
500+ 409.86 грн
IXYA20N120A4HVIXYSIGBT Transistors IGBT XPT-GENX4
на замовлення 3146 шт:
термін постачання 21-30 дні (днів)
1+797.9 грн
50+ 627.21 грн
100+ 488.8 грн
500+ 482.8 грн
1000+ 455.5 грн
5000+ 406.89 грн
IXYA20N120B4HVIXYSDescription: IGBT 1200V 20A GENX4 XPT TO263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
на замовлення 231 шт:
термін постачання 21-31 дні (днів)
1+719.64 грн
50+ 553.18 грн
100+ 494.96 грн
IXYA20N120B4HVIXYSIGBT Transistors 4TH GENERATION (GENX4)TRENCH
на замовлення 1187 шт:
термін постачання 21-30 дні (днів)
1+781.59 грн
10+ 709.15 грн
50+ 526.75 грн
100+ 478.14 грн
250+ 473.48 грн
1000+ 455.5 грн
2500+ 379.58 грн
IXYA20N120B4HVLittelfuse1200V XPT GenX4 IGBT
товар відсутній
IXYA20N120C3HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N120C3HVIXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYA20N120C3HVLittelfuseTrans IGBT Chip N-CH 1200V 40A 278000mW
товар відсутній
IXYA20N120C3HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
товар відсутній
IXYA20N120C3HVIXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXYA20N120C3HV-TRLLittelfuseIXYA20N120C3HV TRL
товар відсутній
IXYA20N120C3HV-TRLIXYSDescription: IXYA20N120C3HV TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXYA20N120C3HV-TRLIXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYA20N120C4HVIXYSDescription: IGBT 1200V 20A X4 HSPEED TO263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
на замовлення 208 шт:
термін постачання 21-31 дні (днів)
1+719.64 грн
50+ 553.18 грн
100+ 494.96 грн
IXYA20N120C4HVIXYSIGBT Transistors IGBT 4TH GENERATION GENX4
на замовлення 154 шт:
термін постачання 21-30 дні (днів)
1+781.59 грн
10+ 670.86 грн
50+ 487.46 грн
100+ 478.14 грн
500+ 421.54 грн
1000+ 379.58 грн
2500+ 362.93 грн
IXYA20N120C4HVLittelfuse1200V IGBT Chip Transistor
товар відсутній
IXYA20N120C4HV-TRLLittelfuseDisc. IGBT XPT-GenX4 TO-263HV
товар відсутній
IXYA20N120C4HV-TRLIXYSDescription: DISC. IGBT XPT-GENX4 TO-263HV
Packaging: Tape & Reel (TR)
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+192.41 грн
1600+ 158.65 грн
Мінімальне замовлення: 800
IXYA20N65B3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 271ns
товар відсутній
IXYA20N65B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 700µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
товар відсутній
IXYA20N65C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
товар відсутній
IXYA20N65C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
товар відсутній
IXYA20N65C3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
300+167.54 грн
Мінімальне замовлення: 300
IXYA20N65C3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYA20N65C3-TRLIXYSDescription: IXYA20N65C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
товар відсутній
IXYA20N65C3-TRLIXYSIGBT Transistors IXYA20N65C3 TRL
товар відсутній
IXYA20N65C3D1IXYSDescription: IGBT 650V 50A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
1+311.92 грн
50+ 237.99 грн
100+ 203.99 грн
IXYA20N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
товар відсутній
IXYA20N65C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
на замовлення 180 шт:
термін постачання 7-14 дні (днів)
1+302.1 грн
3+ 261.92 грн
5+ 201.45 грн
14+ 189.79 грн
IXYA20N65C3D1IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: SMD
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
на замовлення 180 шт:
термін постачання 21-30 дні (днів)
2+251.75 грн
3+ 210.19 грн
5+ 167.87 грн
14+ 158.16 грн
Мінімальне замовлення: 2
IXYA20N65C3D1LittelfuseTrans IGBT Chip N-CH 650V 50A 200000mW 3-Pin(2+Tab) TO-263AA
товар відсутній
IXYA20N65C3D1TRLLittelfuseIXYA20N65C3D1TRL
товар відсутній
IXYA30N120A3HVIXYSDescription: IGBT DISCRETE TO-263HV
Packaging: Tube
Part Status: Active
товар відсутній
IXYA30N120A3HVIXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYA30N120A4HVLittelfuse1200V IGBT Chip Transistor
товар відсутній
IXYA30N120A4HVIXYSDescription: DISC IGBT XPT-GENX4 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
300+454.17 грн
Мінімальне замовлення: 300
IXYA30N120A4HVIXYSIGBT Transistors IGBT XPT-GENX4
на замовлення 279 шт:
термін постачання 21-30 дні (днів)
1+734.19 грн
10+ 637.17 грн
50+ 470.82 грн
100+ 454.17 грн
500+ 422.2 грн
IXYA30N120A4HVLittelfuse1200V IGBT Chip Transistor
товар відсутній
IXYA50N65C3LittelfuseTrans IGBT Chip N-CH 650V 132A 600000mW 3-Pin(2+Tab) D2PAK
товар відсутній
IXYA50N65C3IXYSDescription: IGBT 650V 130A 600W TO263
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
IXYA50N65C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
кількість в упаковці: 1 шт
на замовлення 12 шт:
термін постачання 7-14 дні (днів)
1+565.66 грн
3+ 390.72 грн
8+ 355.44 грн
IXYA50N65C3IXYSIGBT Transistors 650V/130A XPT C3-Class TO-263
товар відсутній
IXYA50N65C3IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+471.38 грн
3+ 313.54 грн
8+ 296.2 грн
IXYA50N65C3-TRLIXYSDescription: IXYA50N65C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 470µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
товар відсутній
IXYA50N65C3-TRLIXYSDiscrete Semiconductor Modules IXYA50N65C3 TRL
товар відсутній
IXYA8N250CHVIXYSIXYA8N250CHV SMD IGBT transistors
товар відсутній
IXYA8N250CHVIXYSDescription: IGBT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
1+1068.3 грн
10+ 945.28 грн
100+ 798.34 грн
IXYA8N90C3D1IXYSIGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode
товар відсутній
IXYA8N90C3D1IXYSDescription: IGBT 900V 20A 125W C3 TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товар відсутній
IXYA8N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 20A 125000mW 3-Pin(2+Tab) TO-263AA
товар відсутній
IXYA8N90C3D1IXYSIXYA8N90C3D1 SMD IGBT transistors
товар відсутній
IXYB82N120C3H1IXYSDescription: IGBT 1200V 164A 1040W PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 164 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 1040 W
товар відсутній
IXYB82N120C3H1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYB82N120C3H1 - IGBT, 164 A, 2.75 V, 1.04 kW, 1.2 kV, TO-264AA, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.75
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.04
Bauform - Transistor: TO-264AA
Anzahl der Pins: 3
Produktpalette: XPT GenX3
Kollektor-Emitter-Spannung, max.: 1.2
productTraceability: No
Betriebstemperatur, max.: 150
Kontinuierlicher Kollektorstrom: 164
SVHC: No SVHC (12-Jan-2017)
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+2093.21 грн
IXYB82N120C3H1LittelfuseTrans IGBT Chip N-CH 1200V 164A 1040W 3-Pin(3+Tab) PLUS 264
товар відсутній
IXYB82N120C3H1IXYSIXYB82N120C3H1 THT IGBT transistors
на замовлення 31 шт:
термін постачання 7-14 дні (днів)
1+1747.25 грн
2+ 1652.35 грн
IXYB82N120C3H1IXYSIGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+2270.17 грн
10+ 2063.9 грн
25+ 1714.12 грн
100+ 1532.32 грн
IXYF30N450IXYSIXYF30N450 THT IGBT transistors
товар відсутній
IXYF30N450IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
1+8550.83 грн
5+ 8137.67 грн
IXYF30N450IXYSDescription: IGBT 4500V 23A 230W ISOPLUS
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 15Ohm, 15V
Gate Charge: 88 nC
Part Status: Active
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 230 W
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
1+9125.56 грн
10+ 8402.3 грн
IXYF40N450LittelfuseHigh Voltage XPTTM IGBT
товар відсутній
IXYF40N450Littelfuse Inc.Description: IGBT 4500V 32A ISOPLUS I4PAK
Packaging: Tube
Package / Case: i4-Pac™-4, Isolated
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: ISOPLUS i4-PAC™
Td (on/off) @ 25°C: 36ns/110ns
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 290 W
товар відсутній
IXYF40N450Ixys CorporationHigh Voltage XPTTM IGBT
товар відсутній
IXYF40N450IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYH100N65A3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYH100N65A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
товар відсутній
IXYH100N65A3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 470W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Turn-on time: 87ns
Turn-off time: 459ns
кількість в упаковці: 1 шт
товар відсутній
IXYH100N65A3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/174ns
Switching Energy: 3.15mJ (on), 2.2mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 470 W
товар відсутній
IXyH100N65C3IXYSIGBT Transistors 650V/200A XPT C3-Class TO-247
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+836.75 грн
10+ 706.86 грн
30+ 557.39 грн
120+ 511.44 грн
270+ 444.84 грн
510+ 438.85 грн
IXyH100N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 200ns
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+729.86 грн
2+ 461.3 грн
IXYH100N65C3LittelfuseTrans IGBT Chip N-CH 650V 200A 830W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXyH100N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Mounting: THT
Gate charge: 172nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 7-14 дні (днів)
1+875.83 грн
2+ 574.85 грн
5+ 523.59 грн
IXyH100N65C3IXYSDescription: IGBT PT 650V 200A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/106ns
Switching Energy: 2.15mJ (on), 840µJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 830 W
на замовлення 1433 шт:
термін постачання 21-31 дні (днів)
1+769.35 грн
30+ 591.69 грн
120+ 529.42 грн
510+ 438.39 грн
1020+ 394.55 грн
IXYH100N65C3LittelfuseTrans IGBT Chip N-CH 650V 200A 830000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH10N170CIXYSDescription: IGBT 1700V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 17 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
на замовлення 632 шт:
термін постачання 21-31 дні (днів)
1+744.13 грн
30+ 572.45 грн
120+ 512.2 грн
510+ 424.13 грн
IXYH10N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH10N170CIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 54 шт:
термін постачання 21-30 дні (днів)
1+821.21 грн
10+ 731.36 грн
30+ 606 грн
120+ 526.09 грн
510+ 487.46 грн
IXYH10N170CIXYSIXYH10N170C THT IGBT transistors
товар відсутній
IXYH10N170CV1LITTELFUSEDescription: LITTELFUSE - IXYH10N170CV1 - TRANSISTOR, IGBT, 1.7KV, 36A, TO-247AD
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.6
Verlustleistung Pd: 280
Bauform - Transistor: TO-247AD
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 1.7
Anzahl der Pins: 3
Produktpalette: XPT Series
DC-Kollektorstrom: 36
Betriebstemperatur, max.: 175
SVHC: To Be Advised
товар відсутній
IXYH10N170CV1IXYSIGBT Transistors 1700V/10A XPT IGBT w/ Diode
на замовлення 166 шт:
термін постачання 21-30 дні (днів)
1+954.06 грн
10+ 828.62 грн
30+ 661.94 грн
60+ 661.27 грн
120+ 622.65 грн
270+ 611.99 грн
510+ 563.38 грн
IXYH10N170CV1IXYSIXYH10N170CV1 THT IGBT transistors
товар відсутній
IXYH10N170CV1IXYSDescription: IGBT 1.7KV 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 10A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/130ns
Switching Energy: 1.4mJ (on), 700µJ (off)
Test Condition: 850V, 10A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 280 W
на замовлення 4622 шт:
термін постачання 21-31 дні (днів)
1+950.88 грн
10+ 806.68 грн
100+ 697.67 грн
500+ 593.36 грн
1000+ 544.25 грн
IXYH10N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH10N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH120N65A5IXYSDescription: IGBT 650V 120A X5 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 75A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 45ns/370ns
Switching Energy: 1.25mJ (on), 3.2mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 314 nC
Part Status: Active
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 790 A
Power - Max: 830 W
на замовлення 56 шт:
термін постачання 21-31 дні (днів)
1+806.09 грн
30+ 628.36 грн
IXYH120N65A5LittelfuseExtreme Light Punch Through IGBT
товар відсутній
IXYH120N65A5LITTELFUSEDescription: LITTELFUSE - IXYH120N65A5 - IGBT, 290 A, 1.22 V, 830 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: Y-EX
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.22V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 830W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pins
Produktpalette: XPT GenX5 Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 290A
SVHC: No SVHC (17-Jan-2022)
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+809.05 грн
5+ 761.24 грн
10+ 712.68 грн
IXYH120N65A5IXYSIGBT Transistors XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+919.88 грн
10+ 833.22 грн
120+ 611.99 грн
270+ 542.07 грн
510+ 502.12 грн
1020+ 474.15 грн
2520+ 462.83 грн
IXYH120N65B3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYH120N65B3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/168ns
Switching Energy: 1.34mJ (on), 1.5mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 760 A
Power - Max: 1360 W
товар відсутній
IXYH120N65C3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYH120N65C3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Part Status: Active
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 1360 W
товар відсутній
IXYH12N250CIXYSDescription: IGBT 2500V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
IXYH12N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 12A
Power dissipation: 310W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Turn-on time: 12ns
Turn-off time: 167ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYH12N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 12A
Power dissipation: 310W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Turn-on time: 12ns
Turn-off time: 167ns
Features of semiconductor devices: high voltage
товар відсутній
IXYH12N250CV1HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 12A
Power dissipation: 310W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 333ns
Features of semiconductor devices: high voltage
товар відсутній
IXYH12N250CV1HVIXYSIGBT Modules IGBT XPT-HI VOLTAGE
товар відсутній
IXYH12N250CV1HVIXYSDescription: IGBT 2500V 28A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
на замовлення 714 шт:
термін постачання 21-31 дні (днів)
1+1689.97 грн
10+ 1446.26 грн
100+ 1264.94 грн
500+ 1012.99 грн
IXYH12N250CV1HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 12A
Power dissipation: 310W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Turn-on time: 32ns
Turn-off time: 333ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYH16N170CIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 63 шт:
термін постачання 21-30 дні (днів)
1+782.36 грн
10+ 709.15 грн
30+ 602.67 грн
120+ 526.09 грн
IXYH16N170CIXYSDescription: IGBT 1.7KV 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/140ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 310 W
на замовлення 1219 шт:
термін постачання 21-31 дні (днів)
1+707.4 грн
10+ 600.17 грн
100+ 519.03 грн
500+ 441.43 грн
1000+ 404.9 грн
IXYH16N170CIXYSIXYH16N170C THT IGBT transistors
товар відсутній
IXYH16N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH16N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH16N170CV1IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
товар відсутній
IXYH16N170CV1IXYSDescription: IGBT 1.7KV 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/140ns
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Test Condition: 850V, 16A, 10Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 310 W
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+1007.79 грн
10+ 854.69 грн
IXYH16N170CV1IXYSIXYH16N170CV1 THT IGBT transistors
товар відсутній
IXYH16N250CIXYSDescription: IGBT 2500V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
товар відсутній
IXYH16N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYH16N250CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
товар відсутній
IXYH16N250CV1HVIXYSDescription: IGBT 2500V 35A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 19 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 14ns/260ns
Switching Energy: 4.75mJ (on), 3.9mJ (off)
Test Condition: 1250V, 16A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 126 A
Power - Max: 500 W
товар відсутній
IXYH16N250CV1HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYH16N250CV1HVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
1+2260.85 грн
10+ 2019.48 грн
120+ 1536.31 грн
270+ 1387.14 грн
IXYH16N250CV1HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 126A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 541ns
Features of semiconductor devices: high voltage
товар відсутній
IXYH1982LittelfuseIXYH1982^IXYS
товар відсутній
IXYH20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH20N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
товар відсутній
IXYH20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH20N120C3IXYSDescription: IGBT 1200V 40A 278W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXYH20N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
товар відсутній
IXYH20N120C3IXYSIGBT Transistors GenX3 1200V XPT IGBT
товар відсутній
IXYH20N120C3D1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH20N120C3D1 - IGBT, 36 A, 4 V, 230 W, 1.2 kV, TO-247AD, 3 Pin(s)
MSL: MSL 1 - unbegrenzt
Kollektor-Emitter-Sättigungsspannung Vce(on): 4
Verlustleistung Pd: 230
Bauform - Transistor: TO-247AD
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Anzahl der Pins: 3
Produktpalette: XPT GenX3
DC-Kollektorstrom: 36
Betriebstemperatur, max.: 150
SVHC: No SVHC (07-Jul-2017)
товар відсутній
IXYH20N120C3D1IXYSDescription: IGBT 1200V 36A 230W TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
1+829.86 грн
30+ 646.88 грн
120+ 608.84 грн
IXYH20N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
на замовлення 294 шт:
термін постачання 7-14 дні (днів)
1+1012.99 грн
2+ 701.92 грн
4+ 639.3 грн
IXYH20N120C3D1IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
1+902.01 грн
10+ 810.24 грн
30+ 625.31 грн
60+ 624.65 грн
120+ 588.69 грн
510+ 554.72 грн
IXYH20N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 36A 230000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH20N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
на замовлення 294 шт:
термін постачання 21-30 дні (днів)
1+844.16 грн
2+ 563.27 грн
4+ 532.75 грн
IXYH20N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 36A 230W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH20N120C4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYH20N120C4IXYSDescription: IGBT DISCRETE TO-247
Packaging: Tube
товар відсутній
IXYH20N65B3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
товар відсутній
IXYH20N65B3IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYH20N65C3IXYSDescription: IGBT 650V 50A 230W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
товар відсутній
IXYH20N65C3LittelfuseTrans IGBT Chip N-CH 650V 50A 230000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH20N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
товар відсутній
IXYH20N65C3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYH20N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
товар відсутній
IXYH20N65C3D1IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
товар відсутній
IXYH20N65C3D1IXYSIGBT Modules IGBT XPT-GENX4
товар відсутній
IXYH24N170CIxys CorporationTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
30+935.64 грн
Мінімальне замовлення: 30
IXYH24N170CIXYSDescription: IGBT 1.7KV 58A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 20A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 12ns/160ns
Switching Energy: 4.9mJ (on), 1.95mJ (off)
Test Condition: 960V, 30A, 15Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
на замовлення 529 шт:
термін постачання 21-31 дні (днів)
1+904.06 грн
30+ 704.85 грн
120+ 663.39 грн
510+ 564.2 грн
IXYH24N170CIXYSIXYH24N170C THT IGBT transistors
товар відсутній
IXYH24N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH24N170CIXYSIGBT Transistors 1700V/58A High Volt
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
1+996.79 грн
10+ 903.67 грн
30+ 753.17 грн
120+ 663.27 грн
510+ 590.02 грн
1020+ 556.72 грн
2520+ 537.41 грн
IXYH24N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH24N170CV1IXYSIXYH24N170CV1 THT IGBT transistors
товар відсутній
IXYH24N170CV1IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
1+1253.96 грн
10+ 1089 грн
120+ 840.41 грн
510+ 809.11 грн
IXYH24N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH24N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH24N170CV1IXYSDescription: IGBT 1.7KV 58A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 24A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 16ns/155ns
Switching Energy: 3.6mJ (on), 1.76mJ (off)
Test Condition: 850V, 24A, 5Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 500 W
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
1+1225.34 грн
10+ 1039.28 грн
100+ 898.81 грн
IXYH24N90C3LittelfuseTrans IGBT Chip N-CH 900V 46A 240000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH24N90C3IXYSDescription: IGBT 900V 46A 240W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 240 W
товар відсутній
IXYH24N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYH24N90C3IXYSIGBT Transistors GenX3 900V XPT IGBTs
товар відсутній
IXYH24N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 240W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 110A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
товар відсутній
IXYH24N90C3D1IXYSDescription: IGBT 900V 44A 200W C3 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/73ns
Switching Energy: 1.35mJ (on), 400µJ (off)
Test Condition: 450V, 24A, 10Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 44 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+796.72 грн
IXYH24N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
кількість в упаковці: 1 шт
товар відсутній
IXYH24N90C3D1IXYSIGBT Transistors 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
1+866.27 грн
10+ 731.36 грн
30+ 577.37 грн
120+ 529.42 грн
270+ 460.83 грн
510+ 440.85 грн
1020+ 413.55 грн
IXYH24N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 24A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
товар відсутній
IXYH24N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 44A 200000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH25N250CHVLittelfuseTrans IGBT Chip N-CH 2500V 95A 937000mW 3-Pin(3+Tab) TO-247HV
товар відсутній
IXYH25N250CHVLittelfuseTrans IGBT Chip N-CH 2500V 95A 937W 3-Pin(3+Tab) TO-247HV
товар відсутній
IXYH25N250CHVIXYSDescription: IGBT 2500V 235A TO-247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 365 шт:
термін постачання 21-31 дні (днів)
1+2425.46 грн
10+ 2075.71 грн
100+ 1815.5 грн
IXYH25N250CHVLITTELFUSEDescription: LITTELFUSE - IXYH25N250CHV - TRANSISTOR, IGBT, 2.5KV, 95A, TO-247HV
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.4
Verlustleistung Pd: 937
Bauform - Transistor: TO-247HV
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 2.5
Anzahl der Pins: 3
Produktpalette: XPT Series
DC-Kollektorstrom: 95
Betriebstemperatur, max.: 175
SVHC: To Be Advised
товар відсутній
IXYH25N250CHVIXYSIXYH25N250CHV THT IGBT transistors
товар відсутній
IXYH25N250CHVIXYSIGBT Transistors 2500V/95A , HV XPT IGBT
на замовлення 304 шт:
термін постачання 21-30 дні (днів)
1+2423.23 грн
10+ 2230.08 грн
30+ 1837.98 грн
120+ 1652.19 грн
270+ 1544.3 грн
510+ 1525.66 грн
1020+ 1508.34 грн
IXYH30N120A4IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
на замовлення 1050 шт:
термін постачання 21-31 дні (днів)
300+548.72 грн
Мінімальне замовлення: 300
IXYH30N120A4IXYSIGBT Transistors IGBT XPT-GENX4
товар відсутній
IXYH30N120B4IXYSIGBT Transistors IGBT XPT-GENX4
товар відсутній
IXYH30N120B4IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/245ns
Switching Energy: 4.4mJ (on), 2.6mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 58 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 174 A
Power - Max: 500 W
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
300+548.72 грн
Мінімальне замовлення: 300
IXYH30N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
товар відсутній
IXYH30N120C3
Код товару: 181016		Транзистори > IGBT
товар відсутній
IXYH30N120C3IXYSDescription: IGBT 1200V 75A 500W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
на замовлення 175 шт:
термін постачання 21-31 дні (днів)
1+767.91 грн
30+ 589.95 грн
120+ 527.86 грн
IXYH30N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
кількість в упаковці: 1 шт
товар відсутній
IXYH30N120C3IXYSIGBT Transistors 1200V XPT GenX3 IGBT
на замовлення 149 шт:
термін постачання 21-30 дні (днів)
1+833.64 грн
10+ 757.4 грн
30+ 562.05 грн
120+ 509.44 грн
510+ 450.17 грн
IXYH30N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 500000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 500W 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 133A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
кількість в упаковці: 300 шт
товар відсутній
IXYH30N120C3D1IXYSIGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
1+965.72 грн
10+ 839.35 грн
30+ 709.89 грн
60+ 670.6 грн
120+ 649.95 грн
IXYH30N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 66A 416000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH30N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 416W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 133A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
товар відсутній
IXYH30N120C3D1IXYSDescription: IGBT 1200V 66A 416W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 133 A
Power - Max: 416 W
на замовлення 504 шт:
термін постачання 21-31 дні (днів)
1+890.37 грн
30+ 693.89 грн
120+ 653.06 грн
IXYH30N120C4IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
товар відсутній
IXYH30N120C4IXYSIGBT Transistors IGBT XPT-GENX4
товар відсутній
IXYH30N120C4LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N120C4H1IXYSDescription: IGBT TRENCH 1200V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 310 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
товар відсутній
IXYH30N120C4H1IXYSIGBT Transistors IXYH30N120C4H1
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+607.56 грн
10+ 513.87 грн
30+ 404.22 грн
120+ 371.59 грн
270+ 349.62 грн
510+ 328.31 грн
1020+ 295.68 грн
IXYH30N170CIXYSIGBT Transistors 1700V/108A High Voltage XPT IGBT
на замовлення 234 шт:
термін постачання 21-30 дні (днів)
1+1325.43 грн
10+ 1173.25 грн
30+ 973.6 грн
60+ 918.99 грн
120+ 899.01 грн
270+ 873.71 грн
IXYH30N170CLittelfuseTrans IGBT Chip N-CH 1700V 100A 937W 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N170CIXYSIXYH30N170C THT IGBT transistors
товар відсутній
IXYH30N170CIXYSDescription: 1700V/108A HIGH VOLTAGE XPT IGB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 10Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+1321.15 грн
10+ 1168.92 грн
IXYH30N450HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N450HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH30N450HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
на замовлення 2 шт:
термін постачання 7-14 дні (днів)
1+2726.11 грн
IXYH30N450HVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2271.76 грн
IXYH30N450HVIXYSDescription: IGBT 4500V 30A TO-247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-247HV
IGBT Type: PT
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
товар відсутній
IXYH30N450HVLITTELFUSEDescription: LITTELFUSE - IXYH30N450HV - IGBT, 60 A, 3.2 V, 430 W, 4.5 kV, TO-247HV, 3 Pin(s)
MSL: -
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.2
Verlustleistung Pd: 430
Bauform - Transistor: TO-247HV
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 4.5
Anzahl der Pins: 3
Produktpalette: -
DC-Kollektorstrom: 60
Betriebstemperatur, max.: 150
SVHC: No SVHC (17-Jan-2022)
товар відсутній
IXYH30N450HVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 444 шт:
термін постачання 21-30 дні (днів)
1+3031.56 грн
10+ 2662.78 грн
30+ 2177.61 грн
60+ 2105.02 грн
120+ 2032.44 грн
270+ 1997.81 грн
IXYH30N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
товар відсутній
IXYH30N65B3D1IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/87ns
Switching Energy: 830µJ (on), 640µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 270 W
товар відсутній
IXYH30N65C3IXYSDescription: IGBT 650V 60A 270W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
товар відсутній
IXYH30N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
кількість в упаковці: 1 шт
товар відсутній
IXYH30N65C3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYH30N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
IXYH30N65C3H1IXYSDescription: IGBT 650V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
товар відсутній
IXYH30N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 60A 270000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH30N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
кількість в упаковці: 1 шт
товар відсутній
IXYH30N65C3H1IXYSIGBT Transistors 650V/60A XPT C3 Copacked TO-247
товар відсутній
IXYH30N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
IXYH30N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 60A 270W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH30N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 60A 270000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N120A4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYH40N120A4IXYSDescription: IGBT 1200V 40A GENX4 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
на замовлення 360 шт:
термін постачання 21-31 дні (днів)
300+584.24 грн
Мінімальне замовлення: 300
IXYH40N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
товар відсутній
IXYH40N120B3IXYSDescription: IGBT 1200V 96A 577W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 577 W
товар відсутній
IXYH40N120B3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYH40N120B3D1IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYH40N120B3D1LittelfuseTrans IGBT Chip N-CH 1200V 86A 480W 3-Pin(3+Tab) TO-247AD
на замовлення 4590 шт:
термін постачання 21-31 дні (днів)
1+1207.66 грн
10+ 1115.18 грн
25+ 1071.39 грн
50+ 986.42 грн
100+ 892.79 грн
500+ 827.31 грн
IXYH40N120B3D1LittelfuseTrans IGBT Chip N-CH 1200V 86A 480W 3-Pin(3+Tab) TO-247AD
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
14+858.31 грн
25+ 818.68 грн
50+ 785.74 грн
100+ 730.96 грн
250+ 655.82 грн
Мінімальне замовлення: 14
IXYH40N120B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N120B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 411ns
товар відсутній
IXYH40N120B3D1LittelfuseTrans IGBT Chip N-CH 1200V 86A 480W 3-Pin(3+Tab) TO-247AD
на замовлення 4590 шт:
термін постачання 21-31 дні (днів)
9+1300.56 грн
10+ 1200.97 грн
25+ 1153.8 грн
50+ 1062.29 грн
100+ 961.47 грн
500+ 890.95 грн
Мінімальне замовлення: 9
IXYH40N120B3D1IXYSDescription: IGBT 1200V 86A 480W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 22ns/177ns
Switching Energy: 2.7mJ (on), 1.6mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 480 W
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
1+713.16 грн
30+ 556.06 грн
120+ 523.35 грн
IXYH40N120B3D1LittelfuseTrans IGBT Chip N-CH 1200V 86A 480000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N120B4IXYSDescription: IGBT DISCRETE TO-247
товар відсутній
IXYH40N120B4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYH40N120B4H1IXYSIGBT Transistors IXYH40N120B4H1
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
1+676.7 грн
10+ 572.07 грн
30+ 450.84 грн
120+ 414.21 грн
270+ 390.24 грн
510+ 365.6 грн
1020+ 328.97 грн
IXYH40N120B4H1IXYSDescription: IGBT TRENCH 1200V 112A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
на замовлення 970 шт:
термін постачання 21-31 дні (днів)
1+623.11 грн
30+ 479.38 грн
120+ 428.93 грн
510+ 355.18 грн
IXYH40N120B4H1LittelfuseIGBT Transistors IXYH40N120B4H1
на замовлення 390 шт:
термін постачання 21-30 дні (днів)
1+676.7 грн
10+ 572.07 грн
30+ 450.84 грн
120+ 414.21 грн
270+ 390.24 грн
510+ 365.6 грн
1020+ 328.97 грн
IXYH40N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 577W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
товар відсутній
IXYH40N120C3LittelfuseTrans IGBT Chip N-CH 1200V 90A 577000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N120C3IXYSIGBT Transistors GenX3 1200V XPT IGBT
товар відсутній
IXYH40N120C3IXYSDescription: IGBT 1200V 70A 577W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 577 W
на замовлення 269 шт:
термін постачання 21-31 дні (днів)
1+743.41 грн
30+ 579.55 грн
120+ 545.45 грн
IXYH40N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 80A 480000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N120C3D1IXYSIGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT
товар відсутній
IXYH40N120C3D1IXYSDescription: IGBT 1200V 64A 480W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/125ns
Switching Energy: 3.9mJ (on), 660µJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 480 W
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+950.88 грн
IXYH40N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 480W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 303ns
товар відсутній
IXYH40N120C4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYH40N120C4IXYSDescription: IGBT DISCRETE TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
товар відсутній
IXYH40N120C4H1LittelfuseIGBT Transistors IXYH40N120C4H1
на замовлення 72 шт:
термін постачання 21-30 дні (днів)
1+676.7 грн
10+ 572.07 грн
30+ 450.84 грн
120+ 414.21 грн
270+ 390.24 грн
510+ 365.6 грн
1020+ 328.97 грн
IXYH40N120C4H1IXYSDescription: IGBT TRENCH 1200V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 380 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/140ns
Switching Energy: 5.55mJ (on), 1.55mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 92 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 680 W
товар відсутній
IXYH40N120C4H1IXYSIGBT Transistors IXYH40N120C4H1
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
1+676.7 грн
10+ 572.07 грн
30+ 450.84 грн
120+ 414.21 грн
270+ 390.24 грн
510+ 365.6 грн
1020+ 328.97 грн
IXYH40N65B3D1IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 800µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 300 W
товар відсутній
IXYH40N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
товар відсутній
IXYH40N65B3D1IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYH40N65C3Ixys CorporationTrans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N65C3IXYSIGBT Transistors 650V/80A XPT C3-Class TO-247
товар відсутній
IXYH40N65C3IXYSDescription: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
IXYH40N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
товар відсутній
IXYH40N65C3D1IXYSDescription: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/110ns
Switching Energy: 830µJ (on), 360µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 66 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
IXYH40N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
товар відсутній
IXYH40N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N65C3H1IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH40N65C3H1 - IGBT, 40 A, 2.35 V, 300 W, 650 V, TO-247, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 2.35
DC-Kollektorstrom: 40
Anzahl der Pins: 3
Bauform - Transistor: TO-247
Kollektor-Emitter-Spannung V(br)ceo: 650
Verlustleistung Pd: 300
Betriebstemperatur, max.: 175
Produktpalette: -
SVHC: No SVHC (12-Jan-2017)
товар відсутній
IXYH40N65C3H1IXYSIGBT Transistors 650V/80A XPT Copacked TO-247
на замовлення 300 шт:
термін постачання 1186-1195 дні (днів)
1+842.19 грн
10+ 712.22 грн
30+ 485.47 грн
IXYH40N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
товар відсутній
IXYH40N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 80A 300000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N65C3H1IXYSDescription: IGBT 650V 80A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/106ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товар відсутній
IXYH40N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
кількість в упаковці: 1 шт
товар відсутній
IXYH40N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
товар відсутній
IXYH40N90C3IXYSDescription: IGBT 900V 105A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
товар відсутній
IXYH40N90C3IXYSIGBT Transistors GenX3 900V XPT IGBTs
товар відсутній
IXYH40N90C3D1IXYSDescription: IGBT 900V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 27ns/78ns
Switching Energy: 1.9mJ (on), 1mJ (off)
Test Condition: 450V, 40A, 5Ohm, 15V
Gate Charge: 74 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 500 W
на замовлення 923 шт:
термін постачання 21-31 дні (днів)
1+724.69 грн
30+ 556.7 грн
120+ 498.09 грн
510+ 412.45 грн
IXYH40N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 90A 500W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 90A 500000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N90C3D1IXYS/LittelfuseТранзистор IGBT; Uceb, В = 900; Ic = 90 А; Pmax, Вт = 500; Uce(on), В = 2,5; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-247AD
на замовлення 3 шт:
термін постачання 2-3 дні (днів)
3+207.99 грн
10+ 178.12 грн
100+ 165.41 грн
Мінімальне замовлення: 3
IXYH40N90C3D1IXYSIGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
на замовлення 228 шт:
термін постачання 21-30 дні (днів)
1+786.25 грн
10+ 664.74 грн
30+ 524.09 грн
120+ 481.47 грн
270+ 452.84 грн
510+ 424.87 грн
1020+ 382.25 грн
IXYH40N90C3D1LITTELFUSEDescription: LITTELFUSE - IXYH40N90C3D1 - IGBT, 90 A, 2.2 V, 500 W, 900 V, TO-247AD, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.2V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 500W
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3Pin(s)
Produktpalette: PW Series
Kollektor-Emitter-Spannung, max.: 900V
productTraceability: No
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 90A
SVHC: No SVHC (17-Jan-2022)
на замовлення 1010 шт:
термін постачання 21-31 дні (днів)
1+764.97 грн
10+ 690.27 грн
30+ 571.49 грн
120+ 496.68 грн
270+ 426.45 грн
IXYH40N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
кількість в упаковці: 1 шт
на замовлення 217 шт:
термін постачання 7-14 дні (днів)
1+781.71 грн
2+ 543.73 грн
3+ 522.76 грн
6+ 494.46 грн
IXYH40N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 40A; 500W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 40A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Turn-on time: 81ns
Turn-off time: 237ns
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
1+651.42 грн
2+ 436.33 грн
3+ 435.63 грн
6+ 412.05 грн
IXYH40N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 90A 500W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH40N90C3D1 транзистор
Код товару: 193543		Транзистори > IGBT
товар відсутній
IXYH50N120C3IXYSIGBT Transistors XPT IGBT C3-Class 1200V/105A
на замовлення 360 шт:
термін постачання 385-394 дні (днів)
1+814.22 грн
10+ 706.86 грн
30+ 548.06 грн
IXYH50N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
товар відсутній
IXYH50N120C3IXYSDescription: IGBT 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 750 W
товар відсутній
IXYH50N120C3LittelfuseTrans IGBT Chip N-CH 1200V 100A 750000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH50N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
товар відсутній
IXYH50N120C3D1IXYSDescription: IGBT 1200V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 625 W
товар відсутній
IXYH50N120C3D1Ixys CorporationTrans IGBT Chip N-CH 1200V 90A 625W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH50N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 90A 625000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH50N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 7-14 дні (днів)
1+1107.12 грн
2+ 763.3 грн
3+ 734.19 грн
4+ 694.24 грн
IXYH50N120C3D1IXYSIGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+1003.01 грн
10+ 987.92 грн
30+ 754.5 грн
60+ 753.17 грн
120+ 706.56 грн
IXYH50N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+922.6 грн
2+ 612.52 грн
3+ 611.83 грн
4+ 578.53 грн
IXYH50N170CIXYSIGBT Transistors 1700V/178A High Volt
товар відсутній
IXYH50N65C3LittelfuseTrans IGBT Chip N-CH 650V 132A 600W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH50N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
кількість в упаковці: 1 шт
товар відсутній
IXYH50N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
товар відсутній
IXYH50N65C3IXYSDescription: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
товар відсутній
IXYH50N65C3IXYSIGBT Transistors 650V/130A XPT C3-Class TO-247
товар відсутній
IXYH50N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
товар відсутній
IXYH50N65C3D1IXYSDescription: IGBT
товар відсутній
IXYH50N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
товар відсутній
IXYH50N65C3D1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH50N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
кількість в упаковці: 1 шт
товар відсутній
IXYH50N65C3H1IXYSDescription: IGBT 650V 130A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
на замовлення 974 шт:
термін постачання 21-31 дні (днів)
1+839.22 грн
30+ 654.37 грн
120+ 615.9 грн
510+ 523.81 грн
IXYH50N65C3H1IXYSIGBT Transistors 650V/130A XPTI C3-Class TO-247
на замовлення 268 шт:
термін постачання 21-30 дні (днів)
1+912.11 грн
10+ 791.86 грн
30+ 632.64 грн
120+ 595.35 грн
270+ 540.07 грн
510+ 528.09 грн
1020+ 494.79 грн
IXYH50N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 130A 600W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH50N65C3H1
Код товару: 189326		Транзистори > IGBT
Корпус: TO-247AD
Vces: 650 V
Vce: 2,1 V
Ic 25: 130 A
Ic 100: 50 A
td(on)/td(off) 100-150 град: 22/80
у наявності 30 шт:
24 шт - склад
2 шт - РАДІОМАГ-Київ
2 шт - РАДІОМАГ-Львів
2 шт - РАДІОМАГ-Дніпро
1+490 грн
IXYH50N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
кількість в упаковці: 1 шт
на замовлення 300 шт:
термін постачання 7-14 дні (днів)
1+819.36 грн
2+ 566.21 грн
5+ 515.27 грн
IXYH50N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+682.8 грн
2+ 454.36 грн
5+ 429.39 грн
IXYH55N120A4LittelfuseDiscrete IGBT XPT Gen 4 1200V TO247
товар відсутній
IXYH55N120A4IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH55N120A4 - IGBT, 175 A, 1.5 V, 650 W, 1.2 kV, TO-247, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.5
DC-Kollektorstrom: 175
Anzahl der Pins: 3
Bauform - Transistor: TO-247
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Verlustleistung Pd: 650
Betriebstemperatur, max.: 175
Produktpalette: XPT GenX4
SVHC: No SVHC (16-Jan-2020)
товар відсутній
IXYH55N120A4IXYSDescription: IGBT GENX4 1200V 55A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+847.87 грн
IXYH55N120A4IXYSIGBT Transistors IGBT XPT GEN 4 1200V TO247
на замовлення 1603 шт:
термін постачання 21-30 дні (днів)
1+921.43 грн
10+ 799.52 грн
30+ 565.38 грн
60+ 514.77 грн
120+ 495.46 грн
270+ 484.14 грн
IXYH55N120B4H1IXYSDescription: IGBT TRENCH 1200V 138A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/215ns
Switching Energy: 3.4mJ (on), 2.75mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 138 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 650 W
товар відсутній
IXYH55N120B4H1IXYSIGBT Transistors IXYH55N120B4H1
на замовлення 72 шт:
термін постачання 21-30 дні (днів)
1+781.59 грн
10+ 660.91 грн
30+ 520.76 грн
120+ 478.14 грн
270+ 450.17 грн
510+ 421.54 грн
1020+ 379.58 грн
IXYH55N120C4LITTELFUSEDescription: LITTELFUSE - IXYH55N120C4 - IGBT, 140 A, 2.1 V, 650 W, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.1V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 650W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT Gen 4 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 140A
SVHC: No SVHC (17-Jan-2023)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
2+599.13 грн
10+ 541.61 грн
Мінімальне замовлення: 2
IXYH55N120C4IXYSDescription: IGBT 1200V 140A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
на замовлення 391 шт:
термін постачання 21-31 дні (днів)
1+562.6 грн
30+ 432.7 грн
120+ 387.14 грн
IXYH55N120C4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
1+611.44 грн
10+ 516.17 грн
30+ 406.89 грн
120+ 374.26 грн
270+ 351.61 грн
510+ 330.3 грн
1020+ 296.34 грн
IXYH55N120C4H1IXYSDescription: IGBT TRENCH 1200V 126A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 180 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Current - Collector (Ic) (Max): 126 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
товар відсутній
IXYH55N120C4H1IXYSIGBT Transistors IXYH55N120C4H1
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+781.59 грн
10+ 660.91 грн
30+ 411.55 грн
IXYH60N90C3IXYSIGBT Transistors 900V 60A 2.7V XPT IGBT GenX3
на замовлення 344 шт:
термін постачання 21-30 дні (днів)
1+598.23 грн
10+ 518.46 грн
30+ 428.2 грн
120+ 392.24 грн
270+ 355.61 грн
510+ 333.63 грн
1020+ 314.32 грн
IXYH60N90C3LittelfuseTrans IGBT Chip N-CH 900V 140A 750000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH60N90C3IXYSIXYH60N90C3 THT IGBT transistors
на замовлення 245 шт:
термін постачання 7-14 дні (днів)
1+626.62 грн
3+ 396.23 грн
7+ 374.59 грн
IXYH60N90C3IXYSDescription: IGBT 900V 140A 750W C3 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 30ns/87ns
Switching Energy: 2.7mJ (on), 1.55mJ (off)
Test Condition: 450V, 60A, 3Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 750 W
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
1+565.48 грн
10+ 467.2 грн
IXYH75N120B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
товар відсутній
IXYH75N120B4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 75A; 1.15kW; TO247,TO247-3
Type of transistor: IGBT
Technology: GenX4™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 1.15kW
Case: TO247; TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Turn-on time: 24ns
Turn-off time: 235ns
кількість в упаковці: 1 шт
товар відсутній
IXYH75N120B4IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 66 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 75A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 22ns/182ns
Switching Energy: 4.5mJ (on), 2.7mJ (off)
Test Condition: 600V, 50A, 3Ohm, 15V
Gate Charge: 157 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 1150 W
товар відсутній
IXYH75N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
кількість в упаковці: 300 шт
товар відсутній
IXYH75N65C3IXYSDescription: IGBT 650V 170A 750W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
товар відсутній
IXYH75N65C3IXYSIGBT Transistors 650V/170A XPT C3-Class TO-247
товар відсутній
IXYH75N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
товар відсутній
IXYH75N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
товар відсутній
IXYH75N65C3D1IXYSDescription: IGBT PT 650V 175A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
товар відсутній
IXYH75N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 170A 750000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH75N65C3H1IXYSDescription: IGBT 650V 170A 750W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/93ns
Switching Energy: 2.8mJ (on), 1mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 750 W
на замовлення 453 шт:
термін постачання 21-31 дні (днів)
1+1115.84 грн
30+ 869.53 грн
120+ 818.38 грн
IXYH75N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
товар відсутній
IXYH75N65C3H1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 179ns
кількість в упаковці: 1 шт
товар відсутній
IXYH75N65C3H1IXYSIGBT Transistors 650V/170A XPT C3-Class TO-247
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
1+1212 грн
10+ 1053.01 грн
30+ 781.81 грн
60+ 754.5 грн
120+ 728.53 грн
270+ 727.87 грн
510+ 688.58 грн
IXYH80N90C3IXYSIXYH80N90C3 THT IGBT transistors
товар відсутній
IXYH80N90C3IXYSIGBT Transistors IGBT XPT-GENX3
на замовлення 172 шт:
термін постачання 21-30 дні (днів)
1+853.06 грн
30+ 671.63 грн
120+ 522.76 грн
270+ 464.82 грн
510+ 438.85 грн
1020+ 406.22 грн
IXYH80N90C3LittelfuseTrans IGBT Chip N-CH 900V 165A 830W 3-Pin(3+Tab) TO-247
товар відсутній
IXYH80N90C3LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH80N90C3IXYSDescription: IGBT 900V 165A 830W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 34ns/90ns
Switching Energy: 4.3mJ (on), 1.9mJ (off)
Test Condition: 450V, 80A, 2Ohm, 15V
Gate Charge: 145 nC
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 830 W
товар відсутній
IXYH82N120C3IXYSIGBT Transistors XPT IGBT C3-Class 1200V/160A
на замовлення 1301 шт:
термін постачання 21-30 дні (днів)
1+1396.91 грн
10+ 1213.07 грн
30+ 1026.87 грн
60+ 989.58 грн
120+ 970.27 грн
270+ 938.3 грн
IXYH82N120C3IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH82N120C3 - IGBT, 82 A, 3.2 V, 1.25 kW, 1.2 kV, TO-247AD, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 3.2V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.25kW
Bauform - Transistor: TO-247AD
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 82A
SVHC: No SVHC (17-Jan-2023)
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
1+1370.82 грн
10+ 1259.51 грн
30+ 1063.79 грн
IXYH82N120C3LittelfuseTrans IGBT Chip N-CH 1200V 200A 1250W 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH82N120C3LittelfuseTrans IGBT Chip N-CH 1200V 200A 1250000mW 3-Pin(3+Tab) TO-247AD
товар відсутній
IXYH82N120C3IXYSDescription: IGBT 1200V 200A 1250W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 29ns/192ns
Switching Energy: 4.95mJ (on), 2.78mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 215 nC
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1250 W
на замовлення 242 шт:
термін постачання 21-31 дні (днів)
1+1285.85 грн
30+ 1002.46 грн
120+ 943.48 грн
IXYH82N120C3IXYSIXYH82N120C3 THT IGBT transistors
товар відсутній
IXYH85N120A4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 85A
Pulsed collector current: 520A
Turn-on time: 73ns
Turn-off time: 990ns
Type of transistor: IGBT
Power dissipation: 1.15kW
Gate charge: 200nC
Technology: GenX4™; Trench™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
товар відсутній
IXYH85N120A4IXYSDescription: IGBT GENX4 1200V 85A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
1+1321.87 грн
10+ 1121.69 грн
100+ 970.11 грн
500+ 825.06 грн
IXYH85N120A4IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 1.2kV; 85A; 1.15kW; TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 85A
Pulsed collector current: 520A
Turn-on time: 73ns
Turn-off time: 990ns
Type of transistor: IGBT
Power dissipation: 1.15kW
Gate charge: 200nC
Technology: GenX4™; Trench™; XPT™
Case: TO247-3
Collector-emitter voltage: 1.2kV
кількість в упаковці: 1 шт
товар відсутній
IXYH85N120A4IXYSIGBT Transistors IGBT XPT GEN 4 1200V TO247
на замовлення 1656 шт:
термін постачання 21-30 дні (днів)
1+1400.8 грн
10+ 1216.9 грн
30+ 994.24 грн
60+ 962.28 грн
120+ 915 грн
270+ 881.03 грн
510+ 785.14 грн
IXYH85N120A4
Код товару: 197385		Транзистори > IGBT
товар відсутній
IXYH85N120A4IXYS SEMICONDUCTORDescription: IXYS SEMICONDUCTOR - IXYH85N120A4 - IGBT, 300 A, 1.5 V, 1.15 kW, 1.2 kV, TO-247, 3 Pin(s)
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.5
DC-Kollektorstrom: 300
Anzahl der Pins: 3
Bauform - Transistor: TO-247
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Verlustleistung Pd: 1.15
Betriebstemperatur, max.: 175
Produktpalette: XPT GenX4
SVHC: No SVHC (16-Jan-2020)
товар відсутній
IXYH85N120A4LittelfuseUltra Low-Vsat IGBT
товар відсутній
IXYH85N120C4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO247
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
1+967.27 грн
10+ 840.11 грн
30+ 711.22 грн
60+ 670.6 грн
120+ 631.31 грн
270+ 603.34 грн
510+ 562.72 грн
IXYH85N120C4LITTELFUSEDescription: LITTELFUSE - IXYH85N120C4 - IGBT, 240 A, 2 V, 1.15 kW, 1.2 kV, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.15kW
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: XPT Gen 4 Series
Kollektor-Emitter-Spannung, max.: 1.2kV
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 240A
SVHC: No SVHC (17-Jan-2023)
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+949.49 грн
10+ 872.55 грн
IXYH85N120C4IXYSDescription: IGBT 1200V 85A GEN4 XPT TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
на замовлення 621 шт:
термін постачання 21-31 дні (днів)
1+912.7 грн
10+ 774.36 грн
100+ 669.74 грн
500+ 569.6 грн
IXYH8N250CLittelfuseIXYH8N250C
товар відсутній
IXYH8N250CIXYSIXYH8N250C THT IGBT transistors
товар відсутній
IXYH8N250CIXYSDescription: IGBT 2500V 29A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
товар відсутній
IXYH8N250CHVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH8N250CHVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
на замовлення 10020 шт:
термін постачання 21-31 дні (днів)
300+1104.79 грн
Мінімальне замовлення: 300
IXYH8N250CHVIXYSIXYH8N250CHV THT IGBT transistors
на замовлення 58 шт:
термін постачання 7-14 дні (днів)
1+1453.4 грн
2+ 1374.32 грн
IXYH8N250CHVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 588 шт:
термін постачання 21-30 дні (днів)
1+1751.19 грн
10+ 1533.95 грн
30+ 1324.55 грн
IXYH8N250CHVIXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
товар відсутній
IXYH8N250CV1HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYH8N250CV1HVIXYSIXYH8N250CV1HV THT IGBT transistors
товар відсутній
IXYH8N250CV1HVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
товар відсутній
IXYH8N250CV1HVIXYSDescription: IGBT 2500V 29A TO247HV
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
товар відсутній
IXYH90N65A5IXYSIGBT Transistors XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO247
на замовлення 325 шт:
термін постачання 21-30 дні (днів)
1+849.18 грн
10+ 756.64 грн
25+ 626.65 грн
100+ 544.74 грн
600+ 474.15 грн
1200+ 418.21 грн
2700+ 404.22 грн
IXYH90N65A5IXYSDescription: IGBT 650V 90A X5 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/420ns
Switching Energy: 1.3mJ (on), 3.4mJ (off)
Test Condition: 400V, 50A, 5Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 650 W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+834.18 грн
IXYH90N65A5LITTELFUSEDescription: LITTELFUSE - IXYH90N65A5 - IGBT, 220 A, 1.22 V, 650 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
hazardous: false
Kollektor-Emitter-Sättigungsspannung: 1.22
usEccn: EAR99
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.22
Verlustleistung Pd: 650
euEccn: NLR
Verlustleistung: 650
Bauform - Transistor: TO-247
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 650
Anzahl der Pins: 3
Produktpalette: XPT GenX5 Series
Kollektor-Emitter-Spannung, max.: 650
DC-Kollektorstrom: 220
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 220
SVHC: No SVHC (17-Jan-2022)
товар відсутній
IXYJ20N120C3D1IXYSIGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT
товар відсутній
IXYJ20N120C3D1IXYSDescription: IGBT 1200V 21A 105W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: ISO247
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 84 A
Power - Max: 105 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
300+741.53 грн
Мінімальне замовлення: 300
IXYJ20N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
товар відсутній
IXYJ20N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 21A 105000mW 3-Pin(3+Tab) TO-247 ISO
товар відсутній
IXYJ20N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
кількість в упаковці: 1 шт
товар відсутній
IXYK100N120B3IXYSLittelfuse
товар відсутній
IXYK100N120B3LittelfuseTrans IGBT Chip N-CH 1200V 225A 1150000mW
товар відсутній
IXYK100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 188A 1150000mW 3-Pin(3+Tab) TO-264AA
товар відсутній
IXYK100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 188A 1150mW 3-Pin(3+Tab) TO-264AA
товар відсутній
IXYK100N120C3IXYSDescription: IGBT 1200V 188A 1150W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 188 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 490 A
Power - Max: 1150 W
на замовлення 81 шт:
термін постачання 21-31 дні (днів)
1+1895.27 грн
10+ 1683.22 грн
IXYK100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
IXYK100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
IXYK100N120C3IXYSIGBT Transistors 1200V 188A XPT IGBT
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+1910.46 грн
10+ 1736.89 грн
25+ 1441.75 грн
100+ 1289.25 грн
IXYK100N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-264(3)
товар відсутній
IXYK100N65B3D1LittelfuseXPTTM 650V IGBT IXYK100N65B3D1
товар відсутній
IXYK100N65B3D1IXYSDescription: IGBT 650V 225A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: TO-264
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 2mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
товар відсутній
IXYK110N120A4IXYSDescription: IGBT 1200V 110A GENX4 XPT TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
на замовлення 1132 шт:
термін постачання 21-31 дні (днів)
1+2524.15 грн
25+ 2015.2 грн
100+ 1889.27 грн
IXYK110N120A4LITTELFUSEDescription: LITTELFUSE - IXYK110N120A4 - IGBT, 375 A, 1.45 V, 1.36 kW, 1.2 kV, TO-264, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: TBA
hazardous: false
rohsPhthalatesCompliant: TBA
Kollektor-Emitter-Sättigungsspannung: 1.45
usEccn: EAR99
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45
Verlustleistung Pd: 1.36
euEccn: NLR
Verlustleistung: 1.36
Bauform - Transistor: TO-264
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Anzahl der Pins: 3
Produktpalette: XPT GenX4 Series
Kollektor-Emitter-Spannung, max.: 1.2
productTraceability: No
DC-Kollektorstrom: 375
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 375
SVHC: No SVHC (17-Jan-2022)
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
1+2806.64 грн
5+ 2697.57 грн
10+ 2588.5 грн
IXYK110N120A4IXYSIGBT Transistors IGBT XPT-GEN4 1200V 110A
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
1+2741.77 грн
10+ 2553.26 грн
25+ 2009.79 грн
IXYK110N120B4IXYSDescription: IGBT 1200V 110A GEN4 XPT TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 45ns/390ns
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1360 W
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+1338.43 грн
IXYK110N120B4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
на замовлення 219 шт:
термін постачання 21-30 дні (днів)
1+1453.63 грн
10+ 1334.07 грн
25+ 985.58 грн
100+ 968.27 грн
250+ 958.95 грн
500+ 831.09 грн
IXYK110N120C4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT TO264
на замовлення 46 шт:
термін постачання 21-30 дні (днів)
1+1453.63 грн
10+ 1334.07 грн
25+ 985.58 грн
100+ 968.27 грн
250+ 958.28 грн
500+ 831.09 грн
IXYK110N120C4IXYSDescription: IGBT 1200V 110A GEN4 XPT TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS264™
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+1338.43 грн
IXYK120N120B3IXYSDescription: DISC IGBT XPT-GENX3 TO-264(3)
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
товар відсутній
IXYK120N120B3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYK120N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
кількість в упаковці: 1 шт
на замовлення 280 шт:
термін постачання 7-14 дні (днів)
1+1731.94 грн
2+ 1579.32 грн
IXYK120N120C3LITTELFUSEDescription: LITTELFUSE - IXYK120N120C3 - TRANSISTOR, IGBT, 1.2KV, 240A, TO-264
tariffCode: 85412900
Transistormontage: Through Hole
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.55
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.5
Bauform - Transistor: TO-264
Anzahl der Pins: 3
Produktpalette: XPT GenX3 Series
Kollektor-Emitter-Spannung, max.: 1.2
productTraceability: No
Betriebstemperatur, max.: 175
directShipCharge: 25
Kontinuierlicher Kollektorstrom: 240
SVHC: To Be Advised
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+1190.04 грн
5+ 1166.13 грн
IXYK120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500000mW 3-Pin(3+Tab) TO-264
товар відсутній
IXYK120N120C3IXYSIGBT Transistors 1200V 220A XPT IGBT
на замовлення 299 шт:
термін постачання 21-30 дні (днів)
1+1969.5 грн
10+ 1807.35 грн
25+ 1335.2 грн
100+ 1311.89 грн
250+ 1198.02 грн
500+ 1148.74 грн
1000+ 1126.1 грн
IXYK120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 240A 1500W 3-Pin(3+Tab) TO-264
товар відсутній
IXYK120N120C3IXYSDescription: IGBT 1200V 240A 1500W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
1+1813.15 грн
25+ 1447.66 грн
100+ 1357.17 грн
IXYK120N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; TO264
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: TO264
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 280 шт:
термін постачання 21-30 дні (днів)
1+1443.29 грн
2+ 1267.36 грн
IXYK140N120A4IXYSDescription: IGBT 140A 1200V TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
на замовлення 107 шт:
термін постачання 21-31 дні (днів)
1+2543.6 грн
25+ 2052.36 грн
100+ 1915.54 грн
IXYK140N120A4LittelfuseUltra Low-Vsat IGBT
товар відсутній
IXYK140N120A4IXYSIGBT Transistors IGBT XPT-GENX4
на замовлення 2231 шт:
термін постачання 21-30 дні (днів)
1+2762.74 грн
10+ 2558.62 грн
25+ 1984.49 грн
50+ 1947.2 грн
100+ 1852.63 грн
250+ 1851.97 грн
IXYK140N90C3IXYSDescription: IGBT 900V 310A 1630W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: TO-264 (IXYK)
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
на замовлення 624 шт:
термін постачання 21-31 дні (днів)
1+1406.15 грн
25+ 1096.44 грн
100+ 1031.94 грн
500+ 877.64 грн
IXYK140N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 840A
Turn-on time: 122ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Case: TO264
товар відсутній
IXYK140N90C3IXYSIGBT Transistors IGBT XPT-GENX3
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
1+1403.9 грн
10+ 1319.52 грн
25+ 1058.17 грн
50+ 1036.2 грн
100+ 995.57 грн
250+ 966.27 грн
500+ 942.3 грн
IXYK140N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Collector-emitter voltage: 900V
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 840A
Turn-on time: 122ns
Turn-off time: 0.3µs
Type of transistor: IGBT
Power dissipation: 1.63kW
Kind of package: tube
Gate charge: 330nC
Technology: GenX3™; Planar; XPT™
Case: TO264
кількість в упаковці: 1 шт
товар відсутній
IXYK200N65B3IXYSIXYK200N65B3 THT IGBT transistors
товар відсутній
IXYK300N65A3LittelfuseIGBT Transistors IGBT DISC XPT
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+2660.19 грн
10+ 2417.71 грн
25+ 1873.94 грн
100+ 1786.04 грн
250+ 1784.04 грн
500+ 1716.12 грн
1000+ 1692.81 грн
IXYK85N120C4H1IXYSIGBT Transistors IXYK85N120C4H1
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
1+1689.03 грн
10+ 1480.34 грн
25+ 1200.02 грн
50+ 1163.39 грн
100+ 1125.43 грн
250+ 1050.18 грн
500+ 966.27 грн
IXYK85N120C4H1IXYSDescription: IGBT TRENCH 1200V 220A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: SOT-227B
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
на замовлення 294 шт:
термін постачання 21-31 дні (днів)
1+1555.98 грн
25+ 1242.14 грн
100+ 1164.51 грн
IXYK85N120C4H1LittelfuseIGBT Transistors IXYK85N120C4H1
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
1+1689.03 грн
10+ 1480.34 грн
25+ 1200.02 грн
50+ 1163.39 грн
100+ 1125.43 грн
250+ 1050.18 грн
500+ 966.27 грн
IXYL40N250CV1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 577W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 577W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
товар відсутній
IXYL40N250CV1IXYSDescription: IGBT 2500V 70A ISOPLUSI5
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Test Condition: 1250V, 40A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 577 W
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
1+5713.92 грн
10+ 5023.3 грн
100+ 4544.05 грн
IXYL40N250CV1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 577W; ISOPLUS i5-pac™
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 577W
Case: ISOPLUS i5-pac™
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYL40N250CV1IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
товар відсутній
IXYL60N450LittelfuseHigh Voltage IGBT
товар відсутній
IXYL60N450IXYSIXYL60N450 THT IGBT transistors
товар відсутній
IXYL60N450IXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+8825.86 грн
10+ 8426.38 грн
IXYL60N450LITTELFUSEDescription: LITTELFUSE - IXYL60N450 - TRANS, IGBT, 4.5KV, 90A, ISOPLUS I5-PAK
Kollektor-Emitter-Spannung, max.: 4.5
Verlustleistung: 417
Anzahl der Pins: 3
Kontinuierlicher Kollektorstrom: 90
Bauform - Transistor: ISOPLUS i5-PAK
Kollektor-Emitter-Sättigungsspannung: 2.64
Betriebstemperatur, max.: 150
Produktpalette: XPT Series
SVHC: To Be Advised
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+9783.28 грн
5+ 9569.62 грн
10+ 9354.47 грн
IXYL60N450IXYSDescription: IGBT 4500V 90A 417W I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 60A
Supplier Device Package: ISOPLUSi5-Pak™
Td (on/off) @ 25°C: 55ns/450ns
Test Condition: 960V, 60A, 4.7Ohm, 15V
Gate Charge: 366 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 680 A
Power - Max: 417 W
на замовлення 1151 шт:
термін постачання 21-31 дні (днів)
1+8465.7 грн
10+ 7546.09 грн
IXYN100N120B3H1LittelfuseTrans IGBT Chip N-CH 1200V 165A 690000mW 4-Pin SOT-227B
товар відсутній
IXYN100N120B3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 76A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 76A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXYN100N120B3H1IXYSIGBT Transistors IGBT XPT-GENX3 SOT-227UI(
товар відсутній
IXYN100N120B3H1LittelfuseTrans IGBT Chip N-CH 1200V 165A 690W 4-Pin SOT-227B
товар відсутній
IXYN100N120B3H1IXYSDescription: IGBT MOD 1200V 165A 690W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 165 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+2687.67 грн
10+ 2415.06 грн
IXYN100N120B3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 76A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 76A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN100N120C3IXYSDescription: IGBT MOD 1200V 152A 830W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 152 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+3298.54 грн
IXYN100N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Power dissipation: 830W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN100N120C3LittelfuseTrans IGBT Module N-CH 1200V 152A 830000mW
товар відсутній
IXYN100N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Power dissipation: 830W
Technology: GenX3™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXYN100N120C3IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
на замовлення 17 шт:
термін постачання 337-346 дні (днів)
1+3407.59 грн
10+ 3133.76 грн
30+ 2610.47 грн
IXYN100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 152A 830000mW
товар відсутній
IXYN100N120C3H1LittelfuseTrans IGBT Chip N-CH 1200V 134A 690000mW 4-Pin SOT-227B
товар відсутній
IXYN100N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 62A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXYN100N120C3H1IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
на замовлення 10 шт:
термін постачання 462-471 дні (днів)
1+4146.45 грн
30+ 3892.69 грн
100+ 3268.41 грн
IXYN100N120C3H1LittelfuseTrans IGBT Chip N-CH 1200V 140A 690W 4-Pin SOT-227B
товар відсутній
IXYN100N120C3H1IXYSDescription: IGBT MOD 1200V 134A 690W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
товар відсутній
IXYN100N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 62A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 62A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 440A
Power dissipation: 690W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN100N65A3LittelfuseIGBT Module, 650V IGBT Gen X3TM
товар відсутній
IXYN100N65A3IXYSDescription: IGBT MOD 650V 170A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 25 µA
товар відсутній
IXYN100N65A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN100N65A3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXYN100N65A3IXYSIGBT Transistors IGBT XPT-GENX3 (MINI
на замовлення 582 шт:
термін постачання 547-556 дні (днів)
1+2939.11 грн
10+ 2581.6 грн
IXYN100N65B3D1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN100N65B3D1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Technology: GenX3™; XPT™
Collector current: 100A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXYN100N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 SOT-227UI(mini
товар відсутній
IXYN100N65B3D1IXYSDescription: DISC IGBT XPT-GENX3 SOT-227UI(MI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 185 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.74 nF @ 25 V
товар відсутній
IXYN100N65C3H1IXYSIGBT Transistors 650V/166A XPT Copacked SOT-227B
товар відсутній
IXYN100N65C3H1IXYSDescription: IGBT MOD 650V 166A 600W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis, Stud Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 166 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.98 nF @ 25 V
товар відсутній
IXYN100N65C3H1LITTELFUSEDescription: LITTELFUSE - IXYN100N65C3H1 - IGBT-Modul, Einfach, 160 A, 1.8 V, 600 W, 175 °C, SOT-227B
tariffCode: 85412900
Transistormontage: Platte
rohsCompliant: YES
IGBT-Technologie: -
Sperrschichttemperatur Tj, max.: 175°C
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.8V
Dauer-Kollektorstrom: 160A
usEccn: EAR99
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.8V
Verlustleistung Pd: 600W
euEccn: NLR
Verlustleistung: 600W
Bauform - Transistor: SOT-227B
Kollektor-Emitter-Spannung V(br)ceo: 650V
Produktpalette: PW Series
Kollektor-Emitter-Spannung, max.: 650V
IGBT-Konfiguration: Einfach
productTraceability: No
DC-Kollektorstrom: 160A
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Jan-2022)
на замовлення 206 шт:
термін постачання 21-31 дні (днів)
1+2361.4 грн
10+ 2178.38 грн
30+ 2019.26 грн
100+ 1727.27 грн
IXYN100N65C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 90A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN100N65C3H1LittelfuseTrans IGBT Chip N-CH 650V 160A 600W 4-Pin SOT-227B
товар відсутній
IXYN100N65C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 90A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 90A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 420A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXYN110N120A4IXYSIGBT Transistors IGBT XPT-GEN4 1200V 110A
на замовлення 207 шт:
термін постачання 21-30 дні (днів)
1+3280.95 грн
10+ 2881.8 грн
20+ 2356.75 грн
50+ 2278.17 грн
100+ 2198.92 грн
200+ 2120.34 грн
500+ 2022.45 грн
IXYN110N120A4IXYSDescription: IGBT PT 1200V 275A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
1+3021.2 грн
10+ 2592.36 грн
IXYN110N120B4H1LittelfuseIGBT Modules IXYN110N120B4H1
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
1+3331.45 грн
10+ 2791.44 грн
20+ 2345.42 грн
50+ 2266.84 грн
100+ 2188.93 грн
200+ 2110.35 грн
500+ 2013.12 грн
IXYN110N120B4H1IXYSDescription: 1200V,110A, XPT GEN4 B4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 218 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V
товар відсутній
IXYN110N120B4H1IXYSIGBT Modules IXYN110N120B4H1
на замовлення 277 шт:
термін постачання 385-394 дні (днів)
1+3266.19 грн
10+ 2479.74 грн
IXYN110N120C4IXYSDescription: IGBT 1200V 110A GEN4 XPT SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227
Part Status: Active
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5.42 nF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+2471.57 грн
IXYN110N120C4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT SOT227B
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+2761.19 грн
10+ 2313.56 грн
20+ 1925.22 грн
50+ 1865.29 грн
100+ 1805.35 грн
200+ 1697.47 грн
IXYN110N120C4H1LittelfuseIGBT Modules IXYN110N120C4H1
на замовлення 398 шт:
термін постачання 21-30 дні (днів)
1+3265.41 грн
10+ 2868.02 грн
20+ 2345.42 грн
50+ 2266.84 грн
IXYN110N120C4H1IXYSIGBT Modules IXYN110N120C4H1
на замовлення 309 шт:
термін постачання 21-30 дні (днів)
1+3265.41 грн
10+ 2868.02 грн
20+ 2345.42 грн
50+ 2266.84 грн
IXYN110N120C4H1IXYSDescription: 1200V, 110A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+3006.79 грн
10+ 2579.74 грн
100+ 2264.33 грн
IXYN120N120C3IXYSIGBT Transistors IGBT XPT-GENX3 (MINI
на замовлення 324 шт:
термін постачання 21-30 дні (днів)
1+2734.78 грн
10+ 2401.63 грн
20+ 2057.74 грн
IXYN120N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN120N120C3IXYSDescription: IGBT MOD 1200V 240A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
NTC Thermistor: No
Supplier Device Package: SOT-227B - miniBLOC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1200 W
Current - Collector Cutoff (Max): 25 µA
на замовлення 217 шт:
термін постачання 21-31 дні (днів)
1+2517.67 грн
10+ 2160.34 грн
100+ 1896.17 грн
IXYN120N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 120A; SOT227B
Technology: GenX3™; XPT™
Collector current: 120A
Power dissipation: 1.2kW
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXYN120N120C3LittelfuseTrans IGBT Module N-CH 1200V 240A 1200000mW
товар відсутній
IXYN120N65B3D1LittelfuseTrans IGBT Module N-CH 650V 250A 830000mW
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+4388.09 грн
10+ 4131.34 грн
25+ 3941.06 грн
50+ 3563.94 грн
100+ 3147.86 грн
IXYN120N65B3D1LittelfuseTrans IGBT Module N-CH 650V 250A 830000mW
товар відсутній
IXYN120N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 SOT-227UI(mini
товар відсутній
IXYN120N65B3D1IXYSDescription: IGBT MODULE DISC IGBT SOT-227UI
товар відсутній
IXYN120N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 SOT-227UI(mini
товар відсутній
IXYN120N65C3D1IXYSDescription: IGBT PT 650V 190A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Current - Collector (Ic) (Max): 190 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 830 W
товар відсутній
IXYN140N120A4IXYSIGBT Transistors IGBT XPT-GENX4
на замовлення 184 шт:
термін постачання 21-30 дні (днів)
1+3459.65 грн
10+ 3038.8 грн
20+ 2484.61 грн
50+ 2402.03 грн
100+ 2319.45 грн
200+ 2235.55 грн
500+ 2132.99 грн
IXYN140N120A4IXYSDescription: IGBT 140A 1200V SOT227B MINIBLOC
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1070 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8.3 nF @ 25 V
товар відсутній
IXYN140N120A4LittelfuseUltra Low-Vsat IGBT
товар відсутній
IXYN150N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Collector current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 750A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXYN150N60B3IXYSIGBT Transistors IGBT XPT-GENX3 (MINI
товар відсутній
IXYN150N60B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 27ns/167ns
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 830 W
товар відсутній
IXYN150N60B3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Collector current: 140A
Power dissipation: 830W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 750A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN300N65A3IXYSIGBT Transistors IGBT XPT-GENX3 (MINI
товар відсутній
IXYN300N65A3IXYSDescription: DISC IGBT XPT-GENX3 SOT-227B(MIN
товар відсутній
IXYN30N170CV1LittelfuseIGBT Module, High Voltage IGBT w/ Diode
товар відсутній
IXYN30N170CV1IXYSIXYN30N170CV1 IGBT modules
товар відсутній
IXYN30N170CV1IXYSIGBT Modules 1700V/85A High Voltage XPT IGBT
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
1+3075.07 грн
10+ 2701.07 грн
20+ 2208.24 грн
50+ 2134.99 грн
100+ 2061.07 грн
200+ 2027.77 грн
IXYN30N170CV1IXYSDescription: 1700V/85A HIGH VOLTAGE XPT IGBT
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 680 W
на замовлення 224 шт:
термін постачання 21-31 дні (днів)
1+2901.62 грн
10+ 2489.97 грн
100+ 2185.57 грн
IXYN50N170CV1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 50A; SOT227B
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 485A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: XPT™
Power dissipation: 880W
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
кількість в упаковці: 1 шт
товар відсутній
IXYN50N170CV1IXYSIGBT Transistors 1700V/120A High Volt
на замовлення 117 шт:
термін постачання 21-30 дні (днів)
1+3977.85 грн
10+ 3636.91 грн
100+ 2846.21 грн
200+ 2754.98 грн
IXYN50N170CV1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 50A; SOT227B
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 485A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: XPT™
Power dissipation: 880W
Case: SOT227B
Max. off-state voltage: 1.7kV
Semiconductor structure: single transistor
товар відсутній
IXYN50N170CV1IXYSDescription: IGBT 1700V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 255 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 22ns/236ns
Switching Energy: 8.7mJ (on), 5.6mJ (off)
Test Condition: 850V, 50A, 1Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 485 A
Power - Max: 880 W
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
1+3662.32 грн
10+ 3206.41 грн
100+ 2885.73 грн
IXYN50N170CV1LittelfuseTrans IGBT Module N-CH 1700V 120A 880000mW
товар відсутній
IXYN75N65C3D1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 75A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
товар відсутній
IXYN75N65C3D1IXYSDescription: IGBT 650V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 26ns/93ns
Switching Energy: 2mJ (on), 950µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 122 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 600 W
товар відсутній
IXYN75N65C3D1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Technology: GenX3™; XPT™
Collector current: 75A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Semiconductor structure: single transistor
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
кількість в упаковці: 1 шт
товар відсутній
IXYN75N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 SOT-227UI(mini
товар відсутній
IXYN80N90C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; XPT™
Gate-emitter voltage: ±20V
Collector current: 70A
Power dissipation: 500W
Pulsed collector current: 340A
кількість в упаковці: 1 шт
на замовлення 6 шт:
термін постачання 7-14 дні (днів)
1+2778.1 грн
IXYN80N90C3H1IXYSIGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
IXYN80N90C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Technology: GenX3™; XPT™
Gate-emitter voltage: ±20V
Collector current: 70A
Power dissipation: 500W
Pulsed collector current: 340A
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+2315.09 грн
IXYN80N90C3H1IXYSDescription: IGBT MOD 900V 115A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 80A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 115 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 4.55 nF @ 25 V
товар відсутній
IXYN82N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Power dissipation: 600W
Technology: GenX3™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXYN82N120C3LittelfuseIGBT Module, 1200V XPT IGBT
товар відсутній
IXYN82N120C3IXYSIGBT Transistors 1200V XPT IGBT GenX3
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
1+2999.71 грн
10+ 2757.74 грн
30+ 2297.48 грн
100+ 2081.71 грн
500+ 2078.38 грн
IXYN82N120C3IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Power dissipation: 600W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN82N120C3IXYSDescription: IGBT MOD 1200V 105A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 4.1 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+2603.39 грн
IXYN82N120C3H1LittelfuseTrans IGBT Module N-CH 1200V 105A 500000mW
товар відсутній
IXYN82N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 66A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Power dissipation: 500W
Technology: GenX3™; XPT™
Mechanical mounting: screw
кількість в упаковці: 1 шт
товар відсутній
IXYN82N120C3H1IXYSIGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+3749.44 грн
10+ 3447.75 грн
30+ 2872.18 грн
100+ 2603.14 грн
500+ 2455.97 грн
1000+ 2371.4 грн
IXYN82N120C3H1IXYSCategory: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 66A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 66A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 320A
Power dissipation: 500W
Technology: GenX3™; XPT™
Mechanical mounting: screw
товар відсутній
IXYN82N120C3H1IXYSDescription: IGBT MOD 1200V 105A 500W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 82A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Active
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.06 nF @ 25 V
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
1+3253.88 грн
10+ 2792.21 грн
IXYN85N120C4H1LittelfuseIGBT Modules IXYN85N120C4H1
на замовлення 387 шт:
термін постачання 21-30 дні (днів)
1+2674.95 грн
10+ 2343.43 грн
20+ 1900.58 грн
50+ 1841.98 грн
100+ 1782.71 грн
200+ 1663.51 грн
500+ 1529.65 грн
IXYN85N120C4H1IXYSDescription: 1200V, 85A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
1+2463.64 грн
10+ 2108.1 грн
100+ 1843.82 грн
IXYN85N120C4H1IXYSIGBT Modules IXYN85N120C4H1
товар відсутній
IXYP10N65B3D1IXYSDescription: IGBT PT 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/125ns
Switching Energy: 300µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 20 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 160 W
товар відсутній
IXYP10N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+321.65 грн
10+ 278.76 грн
50+ 205.77 грн
100+ 187.13 грн
250+ 176.47 грн
500+ 165.82 грн
1000+ 141.84 грн
IXYP10N65B3D1LittelfuseXPTTM 650V IGBT GenX3TM w/Diode
товар відсутній
IXYP10N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 54A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
кількість в упаковці: 1 шт
товар відсутній
IXYP10N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 160W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 54A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
товар відсутній
IXYP10N65C3IXYSDescription: IGBT 650V 30A 160W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
товар відсутній
IXYP10N65C3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
товар відсутній
IXYP10N65C3D1IXYSDescription: IGBT PT 650V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 170 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
товар відсутній
IXYP10N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 7A; 53W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 7A
Power dissipation: 53W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
на замовлення 41 шт:
термін постачання 21-30 дні (днів)
3+137.35 грн
8+ 108.91 грн
21+ 102.67 грн
Мінімальне замовлення: 3
IXYP10N65C3D1MIXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
товар відсутній
IXYP10N65C3D1MIXYSDescription: IGBT 650V 15A TO220 ISOL TAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
Supplier Device Package: TO-220 Isolated Tab
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 53 W
товар відсутній
IXYP10N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 7A; 53W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 7A
Power dissipation: 53W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
кількість в упаковці: 1 шт
на замовлення 41 шт:
термін постачання 7-14 дні (днів)
2+196.32 грн
3+ 171.16 грн
8+ 130.69 грн
21+ 123.2 грн
Мінімальне замовлення: 2
IXYP15N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
товар відсутній
IXYP15N65B3D1IXYSDescription: IGBT TO220AB
Packaging: Tube
Part Status: Active
товар відсутній
IXYP15N65C3IXYSDescription: IGBT 650V 38A 200W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXYP15N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
кількість в упаковці: 1 шт
товар відсутній
IXYP15N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
товар відсутній
IXYP15N65C3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYP15N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
кількість в упаковці: 1 шт
товар відсутній
IXYP15N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 15A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 102ns
товар відсутній
IXYP15N65C3D1LittelfuseHigh Performance 650V IGBT Chip
товар відсутній
IXYP15N65C3D1IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYP15N65C3D1IXYSDescription: IGBT 650V 38A 200W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
товар відсутній
IXYP15N65C3D1LittelfuseHigh Performance 650V IGBT Chip
товар відсутній
IXYP15N65C3D1MIXYSIGBT Transistors 650V/16A XPT IGBT C3 Copacked TO-220
товар відсутній
IXYP15N65C3D1MIXYSDescription: IGBT 650V 16A 48W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/68ns
Switching Energy: 270µJ (on), 230µJ (off)
Test Condition: 400V, 15A, 20Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 48 W
товар відсутній
IXYP15N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 57W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
кількість в упаковці: 1 шт
товар відсутній
IXYP15N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 57W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 57W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Turn-on time: 36ns
Turn-off time: 122ns
товар відсутній
IXYP20N120A4Littelfuse1200V IGBT Chip Transistor
товар відсутній
IXYP20N120A4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYP20N120A4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
товар відсутній
IXYP20N120B4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYP20N120B4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
товар відсутній
IXYP20N120C3IXYSDescription: IGBT 1200V 40A 278W TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
товар відсутній
IXYP20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-220AB
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
2+446.39 грн
10+ 384.17 грн
25+ 383.81 грн
50+ 330.18 грн
100+ 275.08 грн
Мінімальне замовлення: 2
IXYP20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278000mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYP20N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
кількість в упаковці: 1 шт
товар відсутній
IXYP20N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 200ns
товар відсутній
IXYP20N120C3LittelfuseTrans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-220AB
на замовлення 350 шт:
термін постачання 21-31 дні (днів)
25+480.72 грн
29+ 413.34 грн
50+ 355.58 грн
100+ 296.24 грн
Мінімальне замовлення: 25
IXYP20N120C3IXYSIGBT Transistors GenX3 1200V XPT IGBT
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+461.49 грн
10+ 445.71 грн
50+ 310.33 грн
IXYP20N120C4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYP20N120C4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
300+934.33 грн
Мінімальне замовлення: 300
IXYP20N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
товар відсутній
IXYP20N65B3D1IXYSDescription: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
товар відсутній
IXYP20N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 271ns
кількість в упаковці: 1 шт
товар відсутній
IXYP20N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 230W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Turn-on time: 39ns
Turn-off time: 271ns
товар відсутній
IXYP20N65C3IXYSIGBT Modules IGBT XPT-GENX3
товар відсутній
IXYP20N65C3IXYSDescription: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 135 ns
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
товар відсутній
IXYP20N65C3D1IXYSIGBT Transistors IGBT XPT-GENX3
на замовлення 1427 шт:
термін постачання 21-30 дні (днів)
2+263.38 грн
10+ 219.03 грн
50+ 179.14 грн
100+ 153.83 грн
250+ 145.17 грн
500+ 136.52 грн
1000+ 117.2 грн
Мінімальне замовлення: 2
IXYP20N65C3D1LittelfuseTrans IGBT Chip N-CH 650V 50A 200W 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYP20N65C3D1IXYSDescription: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 135 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
товар відсутній
IXYP20N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
на замовлення 209 шт:
термін постачання 7-14 дні (днів)
2+237.56 грн
3+ 204.87 грн
7+ 158.99 грн
17+ 150.67 грн
Мінімальне замовлення: 2
IXYP20N65C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
на замовлення 209 шт:
термін постачання 21-30 дні (днів)
2+197.97 грн
3+ 164.4 грн
7+ 132.49 грн
17+ 125.56 грн
Мінімальне замовлення: 2
IXYP20N65C3D1LittelfuseTrans IGBT Chip N-CH 650V 50A 200000mW 3-Pin(3+Tab) TO-220AB
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
3+121.2 грн
Мінімальне замовлення: 3
IXYP20N65C3D1LITTELFUSEDescription: LITTELFUSE - IXYP20N65C3D1 - IGBT, 50 A, 2.27 V, 200 W, 650 V, TO-220AB, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.27V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 200W
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: PW Series
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 50A
SVHC: No SVHC (17-Jan-2022)
на замовлення 590 шт:
термін постачання 21-31 дні (днів)
3+264.45 грн
10+ 237.56 грн
50+ 215.9 грн
100+ 181.05 грн
500+ 141.51 грн
Мінімальне замовлення: 3
IXYP20N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
кількість в упаковці: 1 шт
товар відсутній
IXYP20N65C3D1MIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 9A
Power dissipation: 50W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
товар відсутній
IXYP20N65C3D1MLittelfuseTrans IGBT Chip N-CH 650V 18A 50000mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYP20N65C3D1MIXYSIGBT Transistors 650V/18A XPT IGBT C3 Copacked TO-220
товар відсутній
IXYP20N65C3D1MIXYSDescription: IGBT 650V 18A 50W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 50 W
товар відсутній
IXYP24N100A4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYP24N100A4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
товар відсутній
IXYP24N100C4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYP24N100C4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/147ns
Switching Energy: 3.6mJ (on), 1mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 132 A
Power - Max: 375 W
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
300+403.95 грн
Мінімальне замовлення: 300
IXYP30N120A4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYP30N120A4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
товар відсутній
IXYP30N120B4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYP30N120B4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Part Status: Active
товар відсутній
IXYP30N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
кількість в упаковці: 300 шт
товар відсутній
IXYP30N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 500W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 145A
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 296ns
товар відсутній
IXYP30N120C3IXYSIGBT Transistors GenX3 1200V XPT IGBT
на замовлення 666 шт:
термін постачання 21-30 дні (днів)
1+685.25 грн
10+ 578.2 грн
50+ 456.17 грн
100+ 419.54 грн
250+ 394.23 грн
500+ 369.59 грн
1000+ 366.93 грн
IXYP30N120C3LittelfuseTrans IGBT Chip N-CH 1200V 75A 500000mW 3-Pin(3+Tab) TO-220
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+350.39 грн
IXYP30N120C3IXYSDescription: IGBT 1200V 75A 500W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 2.6mJ (on), 1.1mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 500 W
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
300+424.06 грн
Мінімальне замовлення: 300
IXYP30N120C4IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYP30N120C4IXYSDescription: IGBT DISCRETE TO-220
Packaging: Tube
Part Status: Active
товар відсутній
IXYP30N65C3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYP30N65C3IXYSDescription: DISC IGBT XPT-GENX3 TO-220AB/FP
товар відсутній
IXYP30N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
кількість в упаковці: 1 шт
товар відсутній
IXYP30N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
IXYP50N65C3IXYSIGBT Transistors 650V/130A XPT C3-Class TO-220
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+552.39 грн
10+ 466.39 грн
50+ 366.93 грн
100+ 337.63 грн
250+ 307.66 грн
500+ 289.68 грн
1000+ 267.71 грн
IXYP50N65C3IXYSDescription: IGBT 650V 130A 600W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/80ns
Switching Energy: 1.3mJ (on), 370µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
на замовлення 1332 шт:
термін постачання 21-31 дні (днів)
1+507.86 грн
50+ 390.39 грн
100+ 349.29 грн
500+ 289.23 грн
1000+ 260.31 грн
IXYP50N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
кількість в упаковці: 1 шт
товар відсутній
IXYP50N65C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 145ns
товар відсутній
IXYP60N65A5IXYSIGBT Transistors XPT thin-wafer technology, 5th generation (GenX5 ) Trench IGBT. Disc IGBT XPT-GenX5 TO220
на замовлення 107 шт:
термін постачання 21-30 дні (днів)
1+482.47 грн
10+ 438.05 грн
50+ 324.98 грн
100+ 295.01 грн
250+ 285.69 грн
500+ 255.05 грн
1000+ 223.09 грн
IXYP60N65A5IXYSDescription: IGBT PT 650V 134A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
1+444.46 грн
50+ 341.38 грн
100+ 305.44 грн
IXYP60N65A5LITTELFUSEDescription: LITTELFUSE - IXYP60N65A5 - IGBT, 134 A, 1.23 V, 395 W, 650 V, TO-220, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: TBA
hazardous: false
rohsPhthalatesCompliant: TBA
Kollektor-Emitter-Sättigungsspannung: 1.23
usEccn: EAR99
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.23
Verlustleistung Pd: 395
euEccn: NLR
Verlustleistung: 395
Bauform - Transistor: TO-220
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 650
Anzahl der Pins: 3
Produktpalette: XPT GenX5 Series
Kollektor-Emitter-Spannung, max.: 650
productTraceability: No
DC-Kollektorstrom: 134
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 134
SVHC: No SVHC (17-Jan-2022)
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+494.54 грн
5+ 470.64 грн
10+ 446.73 грн
50+ 379.44 грн
Мінімальне замовлення: 2
IXYP8N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
кількість в упаковці: 1 шт
товар відсутній
IXYP8N90C3LittelfuseTrans IGBT Chip N-CH 900V 20A 125000mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYP8N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
товар відсутній
IXYP8N90C3IXYSIGBT Transistors XPT 900V IGBT GenX3 XPT IGBT
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
2+275.81 грн
10+ 235.11 грн
50+ 173.14 грн
100+ 155.83 грн
250+ 149.84 грн
500+ 143.18 грн
1000+ 125.2 грн
Мінімальне замовлення: 2
IXYP8N90C3IXYSDescription: IGBT 900V 20A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
на замовлення 1450 шт:
термін постачання 21-31 дні (днів)
300+161.01 грн
Мінімальне замовлення: 300
IXYP8N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
кількість в упаковці: 1 шт
на замовлення 156 шт:
термін постачання 7-14 дні (днів)
1+354.1 грн
3+ 306.87 грн
5+ 223.92 грн
12+ 211.43 грн
IXYP8N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 20A 125mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYP8N90C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Kind of package: tube
Case: TO220-3
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Type of transistor: IGBT
Power dissipation: 125W
Mounting: THT
Gate charge: 13.3nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
на замовлення 156 шт:
термін постачання 21-30 дні (днів)
2+295.08 грн
3+ 246.26 грн
5+ 186.6 грн
12+ 176.2 грн
Мінімальне замовлення: 2
IXYP8N90C3D1IXYSIGBT Transistors XPT 900V IGBT GenX3 XPT IGBTs
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
1+376.81 грн
10+ 327.01 грн
50+ 241.07 грн
100+ 219.09 грн
250+ 203.78 грн
500+ 196.45 грн
1000+ 183.13 грн
IXYP8N90C3D1IXYSDescription: IGBT 900V 20A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товар відсутній
IXYP8N90C3D1LittelfuseTrans IGBT Chip N-CH 900V 20A 125mW 3-Pin(3+Tab) TO-220AB
товар відсутній
IXYQ30N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-3P (3)
товар відсутній
IXYQ40N65B3D1IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYQ40N65C3D1IXYSDescription: IGBT
товар відсутній
IXYQ40N65C3D1IXYSIGBT Transistors
товар відсутній
IXYR100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 484W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
IXYR100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 104A 484000mW 3-Pin(3+Tab) ISOPLUS 247
товар відсутній
IXYR100N120C3IXYSDescription: IGBT 1200V 104A 484W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 484 W
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+2104.9 грн
10+ 1869.61 грн
IXYR100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 56A
Power dissipation: 484W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
IXYR100N120C3IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2043.31 грн
10+ 1857.89 грн
30+ 1542.97 грн
120+ 1379.15 грн
510+ 1241.3 грн
1020+ 1213.33 грн
IXYR100N65A3V1IXYSDescription: IGBT
Packaging: Tube
Part Status: Active
товар відсутній
IXYR100N65A3V1IXYSIGBT Modules IGBT PT-LOW FREQUENCY
товар відсутній
IXYR50N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 290W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
товар відсутній
IXYR50N120C3D1LittelfuseTrans IGBT Chip N-CH 1200V 56A 290000mW 3-Pin(3+Tab) ISOPLUS 247
товар відсутній
IXYR50N120C3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 290W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 290W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 210A
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 0.22µs
товар відсутній
IXYR50N120C3D1IXYSDescription: IGBT 1200V 56A 290W ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 50A
Supplier Device Package: ISOPLUS247™
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 210 A
Power - Max: 290 W
товар відсутній
IXYR50N120C3D1IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYT12N250CV1HVIXYSDescription: DISC IGBT XPT-HI VOLTAGE TO-268A
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
товар відсутній
IXYT12N250CV1HVIXYSIGBT Transistors DISC IGBT XPT-HI VOLTAGE TO-26
товар відсутній
IXYT20N120C3D1HVIXYSDescription: IGBT 1200V 36A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 88 A
Power - Max: 230 W
товар відсутній
IXYT20N120C3D1HVIXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYT20N120C3D1HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 230W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
кількість в упаковці: 1 шт
товар відсутній
IXYT20N120C3D1HVLittelfuseTrans IGBT Chip N-CH 1200V 36A 230000mW 3-Pin(2+Tab) D3PAK
товар відсутній
IXYT20N120C3D1HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 17A
Power dissipation: 230W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
товар відсутній
IXYT25N250CHVIXYSIXYT25N250CHV SMD IGBT transistors
товар відсутній
IXYT25N250CHVLittelfuseTrans IGBT Chip N-CH 2500V 95A 937000mW 3-Pin(2+Tab) TO-268HV
товар відсутній
IXYT25N250CHVIXYSDescription: IGBT 2500V 235A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-268
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 227 шт:
термін постачання 21-31 дні (днів)
1+2352.71 грн
30+ 1877.96 грн
120+ 1760.6 грн
IXYT25N250CHVIXYSIGBT Transistors 2500V/95A , HV XPT IGBT
на замовлення 240 шт:
термін постачання 357-366 дні (днів)
1+2913.47 грн
10+ 2648.23 грн
30+ 2198.92 грн
120+ 1965.84 грн
IXYT30N450HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
кількість в упаковці: 300 шт
товар відсутній
IXYT30N450HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYT30N450HVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 412 шт:
термін постачання 350-359 дні (днів)
1+3321.35 грн
10+ 3005.87 грн
IXYT30N450HVLittelfuseHigh Voltage XPTTMIGBT
товар відсутній
IXYT30N450HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
товар відсутній
IXYT30N450HVIXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
на замовлення 138 шт:
термін постачання 21-31 дні (днів)
1+3017.6 грн
30+ 2435.01 грн
120+ 2272.68 грн
IXYT30N65C3H1HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
товар відсутній
IXYT30N65C3H1HVIXYSDescription: IGBT 650V 60A 270W TO268HV
товар відсутній
IXYT30N65C3H1HVIXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 270W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 118A
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Turn-on time: 59ns
Turn-off time: 0.12µs
кількість в упаковці: 1 шт
товар відсутній
IXYT30N65C3H1HVIXYSIGBT Transistors 650V/60A XPT Copacked TO-268HV
товар відсутній
IXYT40N120A4HVIXYSDescription: IGBT 1200V 40A GNX4 XPT TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
товар відсутній
IXYT40N120A4HVIXYSIGBT Transistors IGBT DISC 1200V
товар відсутній
IXYT40N120A4HVLittelfuseUltra Low-Vsat IGBT
товар відсутній
IXYT55N120A4HVIXYSIGBT Transistors IGBT XPT GEN 4 1200V TO268HV
на замовлення 263 шт:
термін постачання 21-30 дні (днів)
1+912.89 грн
10+ 820.2 грн
30+ 633.3 грн
60+ 619.99 грн
120+ 596.68 грн
270+ 596.01 грн
510+ 539.41 грн
IXYT55N120A4HVIXYSDescription: IGBT PT 1200V 175A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/300ns
Switching Energy: 2.3mJ (on), 5.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 175 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 650 W
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
1+839.94 грн
30+ 654.72 грн
120+ 616.22 грн
IXYT80N90C3IXYSIXYT80N90C3 SMD IGBT transistors
товар відсутній
IXYT80N90C3IXYSDescription: IGBT 900V 165A 830W TO268
на замовлення 4050 шт:
термін постачання 21-31 дні (днів)
IXYT80N90C3IXYSIGBT Transistors IGBT XPT-GENX3
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+922.99 грн
10+ 836.28 грн
30+ 697.23 грн
120+ 613.99 грн
IXYT85N120A4HVLittelfuseDiscrete IGBT XPT Gen 4 1200V TO268HV
товар відсутній
IXYT85N120A4HVIXYSIGBT Transistors IGBT XPT GEN 4 1200V TO268HV
на замовлення 625 шт:
термін постачання 21-30 дні (днів)
1+1396.91 грн
10+ 1213.83 грн
30+ 968.94 грн
60+ 961.61 грн
120+ 911.67 грн
270+ 860.39 грн
510+ 785.14 грн
IXYT85N120A4HVIXYSDescription: IGBT PT 1200V 300A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+1285.85 грн
30+ 1002.46 грн
120+ 943.48 грн
IXYX100N120B3IXYSDescription: IGBT 1200V 188A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/153ns
Switching Energy: 7.7mJ (on), 7.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 1150 W
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
1+1640.99 грн
10+ 1404.22 грн
100+ 1228.16 грн
500+ 983.53 грн
IXYX100N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
товар відсутній
IXYX100N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
товар відсутній
IXYX100N120B3LittelfuseTrans IGBT Chip N-CH 1200V 225A 1150000mW
товар відсутній
IXYX100N120B3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYX100N120C3IXYSDescription: IGBT 1200V 188A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 32ns/123ns
Switching Energy: 6.5mJ (on), 2.9mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 188 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 490 A
Power - Max: 1150 W
товар відсутній
IXYX100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
IXYX100N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Mounting: THT
Gate charge: 260C
Kind of package: tube
Turn-on time: 143ns
Turn-off time: 271ns
товар відсутній
IXYX100N120C3LittelfuseTrans IGBT Chip N-CH 1200V 188A 1150000mW 3-Pin(3+Tab) PLUS 247
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+1135.09 грн
IXYX100N120C3IXYSIGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+1863.84 грн
10+ 1661.84 грн
30+ 1387.81 грн
120+ 1221.99 грн
510+ 1148.07 грн
IXYX100N65B3D1IXYSIGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
товар відсутній
IXYX100N65B3D1IXYSDescription: IGBT PT 650V 225A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 156 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 29ns/150ns
Switching Energy: 1.27mJ (on), 1.37mJ (off)
Test Condition: 400V, 50A, 3Ohm, 15V
Gate Charge: 168 nC
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 830 W
товар відсутній
IXYX100N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
товар відсутній
IXYX100N65B3D1IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 460A
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 358ns
кількість в упаковці: 1 шт
товар відсутній
IXYX110N120A4LITTELFUSEDescription: LITTELFUSE - IXYX110N120A4 - IGBT, 375 A, 1.45 V, 1.36 kW, 1.2 kV, PLUS247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: TBA
hazardous: false
rohsPhthalatesCompliant: TBA
Kollektor-Emitter-Sättigungsspannung: 1.45
usEccn: EAR99
Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45
Verlustleistung Pd: 1.36
euEccn: NLR
Verlustleistung: 1.36
Bauform - Transistor: PLUS247
Qualifizierungsstandard der Automobilindustrie: -
Kollektor-Emitter-Spannung V(br)ceo: 1.2
Anzahl der Pins: 3
Produktpalette: XPT GenX4 Series
Kollektor-Emitter-Spannung, max.: 1.2
productTraceability: No
DC-Kollektorstrom: 375
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 375
SVHC: No SVHC (17-Jan-2022)
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+2806.64 грн
5+ 2697.57 грн
10+ 2588.5 грн
IXYX110N120A4IXYSDescription: IGBT 1200V 110A GNX4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+2501.1 грн
IXYX110N120A4IXYSIGBT Transistors IGBT XPT-GEN4 1200V 110A
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+2743.32 грн
10+ 2702.6 грн
IXYX110N120B4LittelfuseDisc IGBT XPT Gen4 1200V 110A PLUS247
товар відсутній
IXYX110N120B4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
на замовлення 372 шт:
термін постачання 21-30 дні (днів)
1+1492.47 грн
10+ 1297.31 грн
30+ 1097.46 грн
60+ 1035.53 грн
120+ 974.93 грн
IXYX110N120B4IXYSDescription: IGBT 1200V 110A GEN4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 45ns/390ns
Switching Energy: 3.6mJ (on), 3.85mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1360 W
товар відсутній
IXYX110N120C4IXYSDescription: IGBT 1200V 110A GEN4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
товар відсутній
IXYX110N120C4LittelfuseXPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
товар відсутній
IXYX110N120C4IXYSIGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
на замовлення 228 шт:
термін постачання 21-30 дні (днів)
1+1492.47 грн
10+ 1297.31 грн
30+ 1097.46 грн
60+ 1035.53 грн
120+ 974.93 грн
270+ 931.64 грн
510+ 869.05 грн
IXYX120N120B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 30ns/340ns
Switching Energy: 9.7mJ (on), 21.5mJ (off)
Test Condition: 960V, 100A, 1Ohm, 15V
Gate Charge: 400 nC
Part Status: Active
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 800 A
Power - Max: 1500 W
товар відсутній
IXYX120N120B3LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYX120N120B3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYX120N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1825.77 грн
2+ 1603.1 грн
IXYX120N120B3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 800A
Mounting: THT
Gate charge: 400nC
Kind of package: tube
Turn-on time: 84ns
Turn-off time: 826ns
кількість в упаковці: 1 шт
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
1+2190.93 грн
2+ 1997.71 грн
IXYX120N120C3IXYSIGBT Transistors IGBT XPT-GENX3
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2516.46 грн
10+ 2204.05 грн
30+ 1788.04 грн
60+ 1787.37 грн
IXYX120N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+1848.18 грн
2+ 1622.52 грн
IXYX120N120C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 1.5kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 1.5kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 412nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 346ns
кількість в упаковці: 1 шт
на замовлення 14 шт:
термін постачання 7-14 дні (днів)
1+2217.82 грн
2+ 2021.91 грн
IXYX120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500000mW 3-Pin(3+Tab) PLUS 247
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+1588.03 грн
IXYX120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+1976.17 грн
IXYX120N120C3IXYSDescription: IGBT 1200V 240A 1500W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 35ns/176ns
Switching Energy: 6.75mJ (on), 5.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 412 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 700 A
Power - Max: 1500 W
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
1+2317.41 грн
30+ 1850.12 грн
120+ 1734.48 грн
IXYX120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
IXYX120N120C3LittelfuseTrans IGBT Chip N-CH 1200V 220A 1500W 3-Pin(3+Tab) PLUS 247
товар відсутній
IXYX140N120A4IXYSDescription: IGBT PT 1200V 480A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/590ns
Switching Energy: 4.9mJ (on), 12mJ (off)
Test Condition: 600V, 70A, 1.5Ohm, 15V
Gate Charge: 420 nC
Part Status: Active
Current - Collector (Ic) (Max): 480 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 1200 A
Power - Max: 1500 W
на замовлення 367 шт:
термін постачання 21-31 дні (днів)
1+2543.6 грн
30+ 2052.35 грн
120+ 1915.54 грн
IXYX140N120A4IXYSIGBT Transistors IGBT XPT-GENX4
товар відсутній
IXYX140N90C3IXYSIGBT Transistors IGBT XPT-GENX3
товар відсутній
IXYX140N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
товар відсутній
IXYX140N90C3IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 900V
Collector current: 140A
Power dissipation: 1.63kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 330nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 0.3µs
кількість в упаковці: 1 шт
товар відсутній
IXYX140N90C3IXYSDescription: IGBT 900V 310A 1630W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 140A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/145ns
Switching Energy: 4.3mJ (on), 4mJ (off)
Test Condition: 450V, 100A, 1Ohm, 15V
Gate Charge: 330 nC
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1630 W
товар відсутній
IXYX140N90C3LittelfuseTrans IGBT Chip N-CH 900V 310A 1630000mW 3-Pin(3+Tab) PLUS 247
товар відсутній
IXYX200N65B3IXYSIXYX200N65B3 THT IGBT transistors
товар відсутній
IXYX200N65B3IXYSDescription: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 60ns/370ns
Switching Energy: 5mJ (on), 4mJ (off)
Test Condition: 400V, 100A, 0Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 410 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1100 A
Power - Max: 1560 W
товар відсутній
IXYX200N65B3IXYSIGBT Transistors IGBT DISCRETE
товар відсутній
IXYX25N250CV1IXYSIGBT Transistors 2500V/95A , HV XPT IGBT Copacked
товар відсутній
IXYX25N250CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYX25N250CV1IXYSIXYX25N250CV1 THT IGBT transistors
товар відсутній
IXYX25N250CV1HVIXYSIGBT Transistors 2500V/95A , HV XPT IGBT Copacked
на замовлення 712 шт:
термін постачання 21-30 дні (днів)
1+3262.31 грн
10+ 3001.27 грн
30+ 2551.86 грн
120+ 2264.85 грн
510+ 2178.27 грн
1020+ 2053.75 грн
IXYX25N250CV1HVIXYSDescription: IGBT 2500V 235A PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 408 шт:
термін постачання 21-31 дні (днів)
1+3264.68 грн
10+ 2801.02 грн
100+ 2458.59 грн
IXYX25N250CV1HVLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYX25N250CV1HVIXYSIXYX25N250CV1HV THT IGBT transistors
товар відсутній
IXYX300N65A3IXYSIGBT Transistors IGBT DISC XPT
товар відсутній
IXYX300N65A3IXYSDescription: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 125 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/190ns
Switching Energy: 7.8mJ (on), 4.7mJ (off)
Test Condition: 400V, 100A, 1Ohm, 15V
Gate Charge: 565 nC
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1460 A
Power - Max: 2300 W
товар відсутній
IXYX30N170CV1IXYSIXYX30N170CV1 THT IGBT transistors
товар відсутній
IXYX30N170CV1IXYSIGBT Transistors 1700V/108A High Voltage XPT IGBT
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
1+1708.46 грн
10+ 1553.86 грн
30+ 1333.87 грн
120+ 1153.4 грн
510+ 1046.18 грн
IXYX30N170CV1IXYSDescription: 1700V/108A HIGH VOLTAGE XPT IGB
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 30A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 28ns/150ns
Switching Energy: 5.9mJ (on), 3.3mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 140 nC
Part Status: Active
Current - Collector (Ic) (Max): 108 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 255 A
Power - Max: 937 W
на замовлення 1525 шт:
термін постачання 21-31 дні (днів)
1+1759.85 грн
10+ 1562.94 грн
100+ 1334.66 грн
500+ 1137.16 грн
IXYX30N170CV1LittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYX40N250CHVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 1.5kW
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
товар відсутній
IXYX40N250CHVIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 40A; 1.5kW; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 40A
Power dissipation: 1.5kW
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 380A
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Turn-on time: 43ns
Turn-off time: 505ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
товар відсутній
IXYX40N250CHVIXYSIGBT Transistors IGBT XPT-HI VOLTAGE
на замовлення 396 шт:
термін постачання 21-30 дні (днів)
1+3834.12 грн
10+ 3367.34 грн
120+ 2570.51 грн
270+ 2475.95 грн
IXYX40N250CHVIXYSDescription: IGBT 2.5KV 70A TO247HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 11.7mJ (on), 6.9mJ (off)
Test Condition: 1250V, 40A, 1Ohm, 15V
Gate Charge: 270 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 380 A
Power - Max: 1500 W
товар відсутній
IXYX40N450HVLittelfuseTrans IGBT Chip N-CH 4500V 95A 660mW 3-Pin(3+Tab) TO-247PLUS-HV
товар відсутній
IXYX40N450HVIXYSIXYX40N450HV THT IGBT transistors
товар відсутній
IXYX40N450HVIXYSIGBT Transistors High Voltage XPT IGBT
на замовлення 1170 шт:
термін постачання 392-401 дні (днів)
1+4709.72 грн
10+ 3975.4 грн
IXYX40N450HVIXYSDescription: IGBT 4500V 95A TO247PLUS-HV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 40A
Supplier Device Package: TO-247PLUS-HV
Td (on/off) @ 25°C: 36ns/110ns
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 350 A
Power - Max: 660 W
на замовлення 390 шт:
термін постачання 21-31 дні (днів)
1+4393.49 грн
30+ 3702.07 грн
120+ 3437.63 грн
IXYX50N170CLITTELFUSEDescription: LITTELFUSE - IXYX50N170C - IGBT, 178 A, 2.8 V, 1.5 kW, 1.7 kV, PLUS247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 2.8
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 1.5
Bauform - Transistor: PLUS247
Anzahl der Pins: 3
Produktpalette: ARCA IEC Series
Kollektor-Emitter-Spannung, max.: 1.7
productTraceability: Yes-Date/Lot Code
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 178
SVHC: No SVHC (17-Jan-2022)
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+2073.79 грн
5+ 1993.11 грн
10+ 1912.43 грн
IXYX50N170CLittelfuseTrans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
товар відсутній
IXYX50N170CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Turn-on time: 62ns
Turn-off time: 396ns
Type of transistor: IGBT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 260nC
Technology: XPT™
Power dissipation: 1.5kW
Mounting: THT
Case: PLUS247™
товар відсутній
IXYX50N170CIXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Turn-on time: 62ns
Turn-off time: 396ns
Type of transistor: IGBT
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 260nC
Technology: XPT™
Power dissipation: 1.5kW
Mounting: THT
Case: PLUS247™
кількість в упаковці: 1 шт
товар відсутній
IXYX50N170CIXYSIGBT Transistors IGBT DISCRETE
на замовлення 682 шт:
термін постачання 21-30 дні (днів)
1+2026.22 грн
10+ 1810.41 грн
120+ 1394.47 грн
IXYX50N170CIXYSDescription: IGBT 1700V 178A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 44 ns
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 8.7mJ (on), 5.6mJ (off)
Test Condition: 850V, 50A, 1Ohm, 15V
Gate Charge: 260 nC
Part Status: Active
Current - Collector (Ic) (Max): 178 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 460 A
Power - Max: 1500 W
на замовлення 601 шт:
термін постачання 21-31 дні (днів)
1+2019.9 грн
10+ 1728.31 грн
100+ 1511.67 грн
500+ 1210.57 грн
IXYY8N90C3LittelfuseTrans IGBT Chip N-CH 900V 20A 125000mW 3-Pin(2+Tab) DPAK
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
IXYY8N90C3IXYSIXYY8N90C3 SMD IGBT transistors
на замовлення 6 шт:
термін постачання 7-14 дні (днів)
2+221.42 грн
7+ 144.84 грн
19+ 136.52 грн
Мінімальне замовлення: 2
IXYY8N90C3IXYSIGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
2+239.29 грн
10+ 211.37 грн
70+ 136.52 грн
280+ 132.52 грн
560+ 120.53 грн
1050+ 104.55 грн
2520+ 99.89 грн
Мінімальне замовлення: 2
IXYY8N90C3IXYSDescription: IGBT 900V 20A 125W C3 TO-252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товар відсутній
IXYY8N90C3-TRLIXYSDiscrete Semiconductor Modules IXYY8N90C3 TRL
товар відсутній
IXYY8N90C3-TRLIXYSDescription: IXYY8N90C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 20 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
Supplier Device Package: TO-252AA
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/40ns
Switching Energy: 460µJ (on), 180µJ (off)
Test Condition: 450V, 8A, 30Ohm, 15V
Gate Charge: 13.3 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 125 W
товар відсутній