Продукція > IXYS > IXYP20N120B4
IXYP20N120B4

IXYP20N120B4 IXYS


media?resourcetype=datasheets&itemid=aeb4cb01-5ee7-4115-97e3-a99b8c505c4e&filename=littelfuse_discrete_igbts_xpt_ixy_20n120b4_datasheet.pdf Виробник: IXYS
Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220 (IXYP)
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис IXYP20N120B4 IXYS

Description: IGBT DISCRETE TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 47 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-220 (IXYP), Td (on/off) @ 25°C: 15ns/200ns, Switching Energy: 3.9mJ (on), 1.6mJ (off), Test Condition: 960V, 20A, 10Ohm, 15V, Gate Charge: 44 nC, Part Status: Active, Current - Collector (Ic) (Max): 76 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 130 A, Power - Max: 375 W.

Інші пропозиції IXYP20N120B4

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IXYP20N120B4 IXYP20N120B4 Виробник : IXYS media-3322628.pdf IGBT Transistors IGBT DISCRETE
товар відсутній