20KPA32CA-B LITTELFUSE
Виробник: LITTELFUSE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 37.5V; 372A; bidirectional; ±5%; P600; 20kW; bulk
Mounting: THT
Peak pulse power dissipation: 20kW
Tolerance: ±5%
Max. off-state voltage: 32V
Semiconductor structure: bidirectional
Max. forward impulse current: 372A
Breakdown voltage: 37.5V
Leakage current: 0.3mA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Case: P600
кількість в упаковці: 1 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 37.5V; 372A; bidirectional; ±5%; P600; 20kW; bulk
Mounting: THT
Peak pulse power dissipation: 20kW
Tolerance: ±5%
Max. off-state voltage: 32V
Semiconductor structure: bidirectional
Max. forward impulse current: 372A
Breakdown voltage: 37.5V
Leakage current: 0.3mA
Kind of package: bulk
Type of diode: TVS
Features of semiconductor devices: glass passivated
Case: P600
кількість в упаковці: 1 шт
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Технічний опис 20KPA32CA-B LITTELFUSE
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 37.5V; 372A; bidirectional; ±5%; P600; 20kW; bulk, Mounting: THT, Peak pulse power dissipation: 20kW, Tolerance: ±5%, Max. off-state voltage: 32V, Semiconductor structure: bidirectional, Max. forward impulse current: 372A, Breakdown voltage: 37.5V, Leakage current: 0.3mA, Kind of package: bulk, Type of diode: TVS, Features of semiconductor devices: glass passivated, Case: P600, кількість в упаковці: 1 шт.
Інші пропозиції 20KPA32CA-B
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
20KPA32CA-B | Виробник : Littelfuse Inc. | Description: TVS DIODE 32VWM 54.3VC P600 |
товар відсутній |
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20KPA32CA-B | Виробник : Littelfuse | ESD Suppressors / TVS Diodes TVS Hi-Power Diode Axial |
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20KPA32CA-B | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 37.5V; 372A; bidirectional; ±5%; P600; 20kW; bulk Mounting: THT Peak pulse power dissipation: 20kW Tolerance: ±5% Max. off-state voltage: 32V Semiconductor structure: bidirectional Max. forward impulse current: 372A Breakdown voltage: 37.5V Leakage current: 0.3mA Kind of package: bulk Type of diode: TVS Features of semiconductor devices: glass passivated Case: P600 |
товар відсутній |