на замовлення 5000 шт:
термін постачання 273-282 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.69 грн |
| 10+ | 76.78 грн |
| 100+ | 53.74 грн |
| 500+ | 45.66 грн |
| 1000+ | 36.32 грн |
| 2500+ | 31.64 грн |
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Технічний опис 2ED2104S06FXUMA1 Infineon Technologies
Description: LEVEL SHIFT SOI, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 650 V, Supplier Device Package: PG-DSO-8-69, Rise / Fall Time (Typ): 70ns, 35ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 1.1V, 1.7V, Current - Peak Output (Source, Sink): 290mA, 700mA, Part Status: Active, DigiKey Programmable: Not Verified.
Інші пропозиції 2ED2104S06FXUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| 2ED2104S06FXUMA1 | Виробник : Infineon Technologies |
 SP001896444 |
товар відсутній |
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| 2ED2104S06FXUMA1 | Виробник : Infineon Technologies |
650 V Half Bridge Gate Driver with Integrated Bootstrap Diode |
товар відсутній |
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| 2ED2104S06FXUMA1 | Виробник : Infineon Technologies |
650 V Half Bridge Gate Driver with Integrated Bootstrap Diode |
товар відсутній |
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2ED2104S06FXUMA1 | Виробник : Infineon Technologies |
Description: LEVEL SHIFT SOI Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 290mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |
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2ED2104S06FXUMA1 | Виробник : Infineon Technologies |
Description: LEVEL SHIFT SOI Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-69 Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 290mA, 700mA Part Status: Active DigiKey Programmable: Not Verified |
товар відсутній |