Результат пошуку "3770/16" : 26

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3770-16 (100 FT) 3770-16 (100 FT) 3M 3770.pdf 3M Cable and Accessories.pdf 3M_Cable_SelectionGuide_Letter_HR.pdf Category: Ribbon Cables - Single Color
Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m
Type of wire: ribbon
Ribbon cable pitch: 1.27mm
Core structure: stranded
Kind of core: Cu; tinned
Number of cores: 16
Core diameter: 26AWG
Shield structure: unshielded
Wire insulation material: elastomer thermoplastic TPE
Insulation colour: grey
Operating temperature: -40...105°C
Rated voltage: 50V
A dimension: 20.32mm
B dimension: 19.05mm
Package contents: 30.5m
Conform to the norm: UL 20297
Cable structure: 16x26AWG
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+6128.74 грн
3770-16 (100 FT) 3770-16 (100 FT) 3M 3770.pdf 3M Cable and Accessories.pdf 3M_Cable_SelectionGuide_Letter_HR.pdf Category: Ribbon Cables - Single Color
Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m
Type of wire: ribbon
Ribbon cable pitch: 1.27mm
Core structure: stranded
Kind of core: Cu; tinned
Number of cores: 16
Core diameter: 26AWG
Shield structure: unshielded
Wire insulation material: elastomer thermoplastic TPE
Insulation colour: grey
Operating temperature: -40...105°C
Rated voltage: 50V
A dimension: 20.32mm
B dimension: 19.05mm
Package contents: 30.5m
Conform to the norm: UL 20297
Cable structure: 16x26AWG
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 7-14 дні (днів)
1+7354.49 грн
3770/16 100 3770/16 100 3M 3mtm-round-conductor-flat-cable-3770-series-ts0342.pdf Description: CABLE RIBBON 16COND 0.05 GRAY
Features: Zippable
Packaging: Spool
Length: 100.0' (30.48m)
Wire Gauge: 26 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Thermoplastic Elastomer (TPE)
Conductor Strand: 7 Strands / 34 AWG
Pitch: 0.050" (1.27mm)
Operating Temperature: -40°C ~ 105°C
Number of Conductors: 16
Cable Type: Flat Cable
Ratings: UL Style 20297
Jacket Color: Gray
Ribbon Thickness: 0.039" (0.99mm)
Ribbon Width: 0.800" (20.32mm)
Part Status: Active
Voltage: 300 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
100+131.18 грн
Мінімальне замовлення: 100
3770/16-100 3770/16-100 3M 78-5100-0342-5-f-3.pdf Flat Cable Thermoplastic Elastomer 16Conductors 26AWG 300V Roll
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
5+11302.97 грн
Мінімальне замовлення: 5
3770/16-100 3770/16-100 3M Electronic Solutions Division ts0342-3441.pdf Flat Cables .050" 16C TPE ROUND
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+8484.79 грн
10+ 7669.75 грн
20+ 6235.82 грн
3770/16-100 3770/16-100 3M Interconnect Solutions 377009.pdf Flat Cable Thermoplastic Elastomer 16Conductors 26AWG 300V Gray/Blue Edge Roll
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
10320-3210-000 10320-3210-000 3M Electronic Solutions Division 7ebd0a2d75118ba0a754ef182c845c7535dba059-2952285.pdf description D-Sub Backshells 20P JUNCTION SHELL IDC WIREMOUNT SHIELD
на замовлення 434 шт:
термін постачання 21-30 дні (днів)
1+518.99 грн
10+ 441.88 грн
50+ 365.6 грн
100+ 338.96 грн
200+ 314.99 грн
1000+ 293.68 грн
IPD50P03P4L11ATMA2 IPD50P03P4L11ATMA2 Infineon Technologies Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8 Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+33.34 грн
5000+ 30.58 грн
12500+ 29.17 грн
Мінімальне замовлення: 2500
IPD50P03P4L11ATMA2 IPD50P03P4L11ATMA2 Infineon Technologies Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8 Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 19917 шт:
термін постачання 21-31 дні (днів)
4+80.68 грн
10+ 63.54 грн
100+ 49.4 грн
500+ 39.29 грн
1000+ 32.01 грн
Мінімальне замовлення: 4
IPP45P03P4L11AKSA1 IPP45P03P4L11AKSA1 Infineon Technologies IPx45P03P4L-11.pdf Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
на замовлення 3538 шт:
термін постачання 21-31 дні (днів)
485+41.24 грн
Мінімальне замовлення: 485
3770/16 100 3770/16 100 3M 3mtm-round-conductor-flat-cable-3770-series-ts0342.pdf Description: CBL RIBN 16COND 0.05 GRAY FOOT
Features: Zippable
Packaging: Digi-Spool®, Continuous Spool
Length: Enter Number of Feet in Order Quantity
Wire Gauge: 26 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Thermoplastic Elastomer (TPE)
Conductor Strand: 7 Strands / 34 AWG
Pitch: 0.050" (1.27mm)
Operating Temperature: -40°C ~ 105°C
Number of Conductors: 16
Cable Type: Flat Cable
Ratings: UL Style 20297
Jacket Color: Gray
Ribbon Thickness: 0.039" (0.99mm)
Ribbon Width: 0.800" (20.32mm)
Voltage: 300 V
товар відсутній
39537-7016 39537-7016 Molex Pluggable Terminal Blocks 5.08MM EURO PLUG VER ERT ME RWE GRN 16CKT
товар відсутній
22-28-9200 22-28-9200 Molex Headers & Wire Housings KK 100 Hdr Assy RA 20 Ckt Tin
товар відсутній
22-28-9240 22-28-9240 Molex Headers & Wire Housings KK 100 Hdr Assy RA B y RA Bkwy 24 Ckt Tin
товар відсутній
7000057318 3M 010b6033efa4133f996225db86c60dac36f3a8fb-2952220.pdf 3M 3M Round Conductor Flat Cable, 3770 Series, 3770/16, 100 ft
товар відсутній
IPB45P03P4L11ATMA1 IPB45P03P4L11ATMA1 Infineon Technologies Infineon-I45P03P4L_11-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ee39732802 Description: MOSFET P-CH 30V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPB45P03P4L11ATMA2 Infineon Technologies Infineon-I45P03P4L_11-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ee39732802 Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPD50P03P4L11ATMA1 IPD50P03P4L11ATMA1 Infineon Technologies Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
товар відсутній
IPD50P03P4L11ATMA1 IPD50P03P4L11ATMA1 Infineon Technologies Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
товар відсутній
IPI45P03P4L11AKSA1 IPI45P03P4L11AKSA1 Infineon Technologies IPx45P03P4L-11.pdf Description: MOSFET P-CH 30V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
товар відсутній
IPP45P03P4L11AKSA1 IPP45P03P4L11AKSA1 Infineon Technologies IPx45P03P4L-11.pdf Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
товар відсутній
KJ7T20N16SAL27 ITT Cannon MILDTL_38999_fullcatalog-1550610.pdf Circular MIL Spec Connector
товар відсутній
SI4654DY-T1-E3 SI4654DY-T1-E3 Vishay Siliconix si4654dy.pdf Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
товар відсутній
SI4654DY-T1-GE3 SI4654DY-T1-GE3 Vishay Siliconix si4654dy.pdf Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
товар відсутній
SI4654DY-T1-GE3 SI4654DY-T1-GE3 Vishay Siliconix si4654dy.pdf Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
товар відсутній
3770-16 (100 FT) 3770.pdf 3M Cable and Accessories.pdf 3M_Cable_SelectionGuide_Letter_HR.pdf
3770-16 (100 FT)
Виробник: 3M
Category: Ribbon Cables - Single Color
Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m
Type of wire: ribbon
Ribbon cable pitch: 1.27mm
Core structure: stranded
Kind of core: Cu; tinned
Number of cores: 16
Core diameter: 26AWG
Shield structure: unshielded
Wire insulation material: elastomer thermoplastic TPE
Insulation colour: grey
Operating temperature: -40...105°C
Rated voltage: 50V
A dimension: 20.32mm
B dimension: 19.05mm
Package contents: 30.5m
Conform to the norm: UL 20297
Cable structure: 16x26AWG
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+6128.74 грн
3770-16 (100 FT) 3770.pdf 3M Cable and Accessories.pdf 3M_Cable_SelectionGuide_Letter_HR.pdf
3770-16 (100 FT)
Виробник: 3M
Category: Ribbon Cables - Single Color
Description: Wire: ribbon; 1.27mm; stranded; Cu; unshielded; grey; 30.5m
Type of wire: ribbon
Ribbon cable pitch: 1.27mm
Core structure: stranded
Kind of core: Cu; tinned
Number of cores: 16
Core diameter: 26AWG
Shield structure: unshielded
Wire insulation material: elastomer thermoplastic TPE
Insulation colour: grey
Operating temperature: -40...105°C
Rated voltage: 50V
A dimension: 20.32mm
B dimension: 19.05mm
Package contents: 30.5m
Conform to the norm: UL 20297
Cable structure: 16x26AWG
кількість в упаковці: 1 шт
на замовлення 4 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
1+7354.49 грн
3770/16 100 3mtm-round-conductor-flat-cable-3770-series-ts0342.pdf
3770/16 100
Виробник: 3M
Description: CABLE RIBBON 16COND 0.05 GRAY
Features: Zippable
Packaging: Spool
Length: 100.0' (30.48m)
Wire Gauge: 26 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Thermoplastic Elastomer (TPE)
Conductor Strand: 7 Strands / 34 AWG
Pitch: 0.050" (1.27mm)
Operating Temperature: -40°C ~ 105°C
Number of Conductors: 16
Cable Type: Flat Cable
Ratings: UL Style 20297
Jacket Color: Gray
Ribbon Thickness: 0.039" (0.99mm)
Ribbon Width: 0.800" (20.32mm)
Part Status: Active
Voltage: 300 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
100+131.18 грн
Мінімальне замовлення: 100
3770/16-100 78-5100-0342-5-f-3.pdf
3770/16-100
Виробник: 3M
Flat Cable Thermoplastic Elastomer 16Conductors 26AWG 300V Roll
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+11302.97 грн
Мінімальне замовлення: 5
3770/16-100 ts0342-3441.pdf
3770/16-100
Виробник: 3M Electronic Solutions Division
Flat Cables .050" 16C TPE ROUND
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+8484.79 грн
10+ 7669.75 грн
20+ 6235.82 грн
3770/16-100 377009.pdf
3770/16-100
Виробник: 3M Interconnect Solutions
Flat Cable Thermoplastic Elastomer 16Conductors 26AWG 300V Gray/Blue Edge Roll
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
10320-3210-000 description 7ebd0a2d75118ba0a754ef182c845c7535dba059-2952285.pdf
10320-3210-000
Виробник: 3M Electronic Solutions Division
D-Sub Backshells 20P JUNCTION SHELL IDC WIREMOUNT SHIELD
на замовлення 434 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
1+518.99 грн
10+ 441.88 грн
50+ 365.6 грн
100+ 338.96 грн
200+ 314.99 грн
1000+ 293.68 грн
IPD50P03P4L11ATMA2 Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8
IPD50P03P4L11ATMA2
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+33.34 грн
5000+ 30.58 грн
12500+ 29.17 грн
Мінімальне замовлення: 2500
IPD50P03P4L11ATMA2 Infineon-IPD50P03P4L-11-DataSheet-v01_02-EN.pdf?fileId=db3a30431ddc9372011e07ebbe0127e8
IPD50P03P4L11ATMA2
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 19917 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4+80.68 грн
10+ 63.54 грн
100+ 49.4 грн
500+ 39.29 грн
1000+ 32.01 грн
Мінімальне замовлення: 4
IPP45P03P4L11AKSA1 IPx45P03P4L-11.pdf
IPP45P03P4L11AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
на замовлення 3538 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
485+41.24 грн
Мінімальне замовлення: 485
3770/16 100 3mtm-round-conductor-flat-cable-3770-series-ts0342.pdf
3770/16 100
Виробник: 3M
Description: CBL RIBN 16COND 0.05 GRAY FOOT
Features: Zippable
Packaging: Digi-Spool®, Continuous Spool
Length: Enter Number of Feet in Order Quantity
Wire Gauge: 26 AWG
Shielding: Unshielded
Jacket (Insulation) Material: Thermoplastic Elastomer (TPE)
Conductor Strand: 7 Strands / 34 AWG
Pitch: 0.050" (1.27mm)
Operating Temperature: -40°C ~ 105°C
Number of Conductors: 16
Cable Type: Flat Cable
Ratings: UL Style 20297
Jacket Color: Gray
Ribbon Thickness: 0.039" (0.99mm)
Ribbon Width: 0.800" (20.32mm)
Voltage: 300 V
товар відсутній
39537-7016
39537-7016
Виробник: Molex
Pluggable Terminal Blocks 5.08MM EURO PLUG VER ERT ME RWE GRN 16CKT
товар відсутній
22-28-9200
22-28-9200
Виробник: Molex
Headers & Wire Housings KK 100 Hdr Assy RA 20 Ckt Tin
товар відсутній
22-28-9240
22-28-9240
Виробник: Molex
Headers & Wire Housings KK 100 Hdr Assy RA B y RA Bkwy 24 Ckt Tin
товар відсутній
7000057318 010b6033efa4133f996225db86c60dac36f3a8fb-2952220.pdf
Виробник: 3M
3M 3M Round Conductor Flat Cable, 3770 Series, 3770/16, 100 ft
товар відсутній
IPB45P03P4L11ATMA1 Infineon-I45P03P4L_11-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ee39732802
IPB45P03P4L11ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPB45P03P4L11ATMA2 Infineon-I45P03P4L_11-DS-v01_00-en.pdf?fileId=db3a30431ddc9372011e07ee39732802
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
IPD50P03P4L11ATMA1 Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t
IPD50P03P4L11ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
товар відсутній
IPD50P03P4L11ATMA1 Infineon-IPD50P03P4L_11-DS-v01_01-en.pdf?folderId=db3a304314dca3890114ef902baa05f9&fileId=db3a30431ddc9372011e07ebbe0127e8&ack=t
IPD50P03P4L11ATMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
товар відсутній
IPI45P03P4L11AKSA1 IPx45P03P4L-11.pdf
IPI45P03P4L11AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
товар відсутній
IPP45P03P4L11AKSA1 IPx45P03P4L-11.pdf
IPP45P03P4L11AKSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
товар відсутній
KJ7T20N16SAL27 MILDTL_38999_fullcatalog-1550610.pdf
Виробник: ITT Cannon
Circular MIL Spec Connector
товар відсутній
SI4654DY-T1-E3 si4654dy.pdf
SI4654DY-T1-E3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
товар відсутній
SI4654DY-T1-GE3 si4654dy.pdf
SI4654DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
товар відсутній
SI4654DY-T1-GE3 si4654dy.pdf
SI4654DY-T1-GE3
Виробник: Vishay Siliconix
Description: MOSFET N-CH 25V 28.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 15 V
товар відсутній