6.6SM8Z13A-Q DIOTEC SEMICONDUCTOR
Виробник: DIOTEC SEMICONDUCTORCategory: Unidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 14.4÷15.9V; 307A; unidirectional; DO218AB
Peak pulse power dissipation: 6.6kW
Application: automotive industry
Max. off-state voltage: 13V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 10µA
Case: DO218AB
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 307A
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис 6.6SM8Z13A-Q DIOTEC SEMICONDUCTOR
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 6.6kW; 14.4÷15.9V; 307A; unidirectional; DO218AB, Peak pulse power dissipation: 6.6kW, Application: automotive industry, Max. off-state voltage: 13V, Kind of package: reel; tape, Semiconductor structure: unidirectional, Leakage current: 10µA, Case: DO218AB, Type of diode: TVS, Mounting: SMD, Breakdown voltage: 14.4...15.9V, Max. forward impulse current: 307A, кількість в упаковці: 1 шт.
Інші пропозиції 6.6SM8Z13A-Q
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
6.6SM8Z13A-Q | Виробник : DIOTEC SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 6.6kW; 14.4÷15.9V; 307A; unidirectional; DO218AB Peak pulse power dissipation: 6.6kW Application: automotive industry Max. off-state voltage: 13V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 10µA Case: DO218AB Type of diode: TVS Mounting: SMD Breakdown voltage: 14.4...15.9V Max. forward impulse current: 307A |
товар відсутній |