на замовлення 800 шт:
термін постачання 1127-1136 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 374.51 грн |
| 10+ | 309.91 грн |
| 25+ | 265.53 грн |
| 100+ | 217.97 грн |
| 500+ | 212.02 грн |
| 800+ | 165.79 грн |
| 2400+ | 156.54 грн |
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Технічний опис AFGB40T65SQDN onsemi
Description: 650V/40A FS4 IGBT TO263 A, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 131 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 17.6ns/75.2ns, Switching Energy: 858µJ (on), 229µJ (off), Test Condition: 400V, 40A, 6Ohm, 15V, Gate Charge: 76 nC, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 238 W, Qualification: AEC-Q101.
Інші пропозиції AFGB40T65SQDN
| Фото | Назва | Виробник | Інформація |
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AFGB40T65SQDN | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 650V 80A 238000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
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AFGB40T65SQDN | Виробник : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry Mounting: SMD Case: D2PAK Type of transistor: IGBT Application: automotive industry Power dissipation: 119W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 76nC Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A кількість в упаковці: 800 шт |
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AFGB40T65SQDN | Виробник : ONSEMI |
Description: ONSEMI - AFGB40T65SQDN - IGBT, 80 A, 1.6 V, 238 W, 650 V, TO-263 (D2PAK), 3 Pin(s) Kollektor-Emitter-Sättigungsspannung: 1.6 MSL: MSL 1 - unbegrenzt Kollektor-Emitter-Sättigungsspannung Vce(on): 1.6 Verlustleistung Pd: 238 Verlustleistung: 238 Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Kollektor-Emitter-Spannung V(br)ceo: 650 Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 650 DC-Kollektorstrom: 80 Betriebstemperatur, max.: 175 Kollektorstrom: 80 SVHC: Lead (10-Jun-2022) |
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AFGB40T65SQDN | Виробник : ONSEMI |
Description: ONSEMI - AFGB40T65SQDN - IGBT, 80 A, 1.6 V, 238 W, 650 V, TO-263 (D2PAK), 3 Pin(s) Kollektor-Emitter-Sättigungsspannung: 1.6 MSL: MSL 1 - unbegrenzt Verlustleistung: 238 Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: - Kollektor-Emitter-Spannung, max.: 650 Betriebstemperatur, max.: 175 Kollektorstrom: 80 SVHC: Lead (10-Jun-2022) |
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AFGB40T65SQDN | Виробник : onsemi |
Description: 650V/40A FS4 IGBT TO263 A Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 131 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 17.6ns/75.2ns Switching Energy: 858µJ (on), 229µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 76 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 238 W Qualification: AEC-Q101 |
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AFGB40T65SQDN | Виробник : onsemi |
Description: 650V/40A FS4 IGBT TO263 A Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 131 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 17.6ns/75.2ns Switching Energy: 858µJ (on), 229µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 76 nC Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 238 W Qualification: AEC-Q101 |
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AFGB40T65SQDN | Виробник : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry Mounting: SMD Case: D2PAK Type of transistor: IGBT Application: automotive industry Power dissipation: 119W Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Gate charge: 76nC Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 160A |
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