AFGHL25T120RH ON Semiconductor


Виробник: ON Semiconductor
AFGHL25T120RH
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Технічний опис AFGHL25T120RH ON Semiconductor

Description: 1200V/25A FSII IGBT (NO FRD) TO2, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 159 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 27ns/118ns, Switching Energy: 1.94mJ (on), 770µJ (off), Test Condition: 600V, 25A, 5Ohm, 15V, Gate Charge: 189 nC, Grade: Automotive, Part Status: Obsolete, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 261 W, Qualification: AEC-Q101.

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AFGHL25T120RH AFGHL25T120RH Виробник : onsemi Description: 1200V/25A FSII IGBT (NO FRD) TO2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 159 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/118ns
Switching Energy: 1.94mJ (on), 770µJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 189 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 261 W
Qualification: AEC-Q101
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AFGHL25T120RH Виробник : onsemi AFGHL25T120RH_D-3134880.pdf IGBT Transistors 1200V/25A FSII IGBT (NO FRD) TO247 AUTOMOTIVE
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