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AFGHL40T120RL

AFGHL40T120RL onsemi


Виробник: onsemi
Description: 1200V/40A FSII IGBT LOW VCESAT (
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/208ns
Switching Energy: 3.4mJ (on), 1.2mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 395 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 529 W
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис AFGHL40T120RL onsemi

Description: 1200V/40A FSII IGBT LOW VCESAT (, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 195 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 48ns/208ns, Switching Energy: 3.4mJ (on), 1.2mJ (off), Test Condition: 600V, 40A, 5Ohm, 15V, Gate Charge: 395 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 1250 V, Current - Collector Pulsed (Icm): 160 A, Power - Max: 529 W, Grade: Automotive, Qualification: AEC-Q101.

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AFGHL40T120RL Виробник : onsemi AFGHL40T120RL_D-3134855.pdf IGBT Transistors 1200V/40A FSII IGBT LOW VCESAT (NO FRD) TO247 AUTOMOTIVE
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