AIKQ100N60CTXKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IC DISCRETE 600V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Test Condition: 400V, 100A, 3.6Ohm, 15V
Gate Charge: 610 nC
Grade: Automotive
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 714 W
Qualification: AEC-Q101
Description: IC DISCRETE 600V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/290ns
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Test Condition: 400V, 100A, 3.6Ohm, 15V
Gate Charge: 610 nC
Grade: Automotive
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 714 W
Qualification: AEC-Q101
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 896.85 грн |
10+ | 793.3 грн |
30+ | 760.42 грн |
120+ | 628.76 грн |
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Технічний опис AIKQ100N60CTXKSA1 Infineon Technologies
Description: IC DISCRETE 600V TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A, Supplier Device Package: PG-TO247-3-46, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/290ns, Switching Energy: 3.1mJ (on), 2.5mJ (off), Test Condition: 400V, 100A, 3.6Ohm, 15V, Gate Charge: 610 nC, Grade: Automotive, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 400 A, Power - Max: 714 W, Qualification: AEC-Q101.
Інші пропозиції AIKQ100N60CTXKSA1 за ціною від 528.09 грн до 973.49 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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AIKQ100N60CTXKSA1 | Виробник : Infineon Technologies | IGBT Transistors DISCRETES |
на замовлення 224 шт: термін постачання 21-30 дні (днів) |
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AIKQ100N60CTXKSA1 | Виробник : Infineon Technologies | IGBT in TRENCHSTOP and Field stop technology |
товар відсутній |
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AIKQ100N60CTXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 100A; 714W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 714W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 610nC Kind of package: tube Turn-on time: 68ns Turn-off time: 321ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 240 шт |
товар відсутній |
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AIKQ100N60CTXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 100A; 714W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 100A Power dissipation: 714W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 610nC Kind of package: tube Turn-on time: 68ns Turn-off time: 321ns Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |