AIKW30N60CTXKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 438.7 грн |
10+ | 378.89 грн |
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Технічний опис AIKW30N60CTXKSA1 Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A, Supplier Device Package: PG-TO247-3-41, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 23ns/254ns, Switching Energy: 690µJ (on), 770µJ (off), Test Condition: 400V, 30A, 10.6Ohm, 15V, Gate Charge: 167 nC, Part Status: Active, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 187 W, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції AIKW30N60CTXKSA1 за ціною від 204.44 грн до 566.26 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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AIKW30N60CTXKSA1 | Виробник : Infineon Technologies | IGBT Transistors DISCRETES |
на замовлення 287 шт: термін постачання 21-30 дні (днів) |
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AIKW30N60CTXKSA1 | Виробник : INFINEON |
Description: INFINEON - AIKW30N60CTXKSA1 - IGBT, 60 A, 1.5 V, 187 W, 600 V, TO-247, 3 Pin(s) tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Kollektor-Emitter-Spannung, max.: 600V rohsCompliant: YES Verlustleistung: 187W Anzahl der Pins: 3Pin(s) euEccn: NLR Kontinuierlicher Kollektorstrom: 60A hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.5V Betriebstemperatur, max.: 175°C usEccn: EAR99 |
на замовлення 337 шт: термін постачання 21-31 дні (днів) |
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AIKW30N60CTXKSA1 | Виробник : Infineon Technologies | IGBT Chip with Fast Recovery Emitter Controlled Diode |
товар відсутній |
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AIKW30N60CTXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 167nC Kind of package: tube Turn-on time: 44ns Turn-off time: 0.3µs Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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AIKW30N60CTXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 167nC Kind of package: tube Turn-on time: 44ns Turn-off time: 0.3µs Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |