Технічний опис AO4627 Alpha & Omega Semiconductor
Description: MOSFET N/P-CH 30V 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Інші пропозиції AO4627
| Фото | Назва | Виробник | Інформація |
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AO4627 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3.5/-2.5A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/100mΩ Mounting: SMD Gate charge: 2/2.2nC Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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AO4627 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
товар відсутній |
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AO4627 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 3.5/-2.5A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/100mΩ Mounting: SMD Gate charge: 2/2.2nC Kind of channel: enhanced |
товар відсутній |