AOB11S65L ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 198W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 198W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.11Ω
Mounting: SMD
Gate charge: 13.2nC
Kind of channel: enhanced
на замовлення 773 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.32 грн |
| 5+ | 104.31 грн |
| 10+ | 87.03 грн |
| 26+ | 82.28 грн |
| 500+ | 81.37 грн |
Відгуки про товар
Написати відгук
Технічний опис AOB11S65L ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 650V 11A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V, Power Dissipation (Max): 198W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V.
Інші пропозиції AOB11S65L за ціною від 97.64 грн до 152.78 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
AOB11S65L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 198W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 198W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.11Ω Mounting: SMD Gate charge: 13.2nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 773 шт: термін постачання 7-14 дні (днів) |
|
||||||||||||
 |
AOB11S65L | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
|||||||||||||
 |
AOB11S65L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 11A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V |
товар відсутній |
|||||||||||||
|
|
AOB11S65L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 650V 11A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V |
товар відсутній |