AOB2918L

AOB2918L Alpha & Omega Semiconductor


574303728279385aob2918l.pdf Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) D2PAK T/R
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис AOB2918L Alpha & Omega Semiconductor

Description: MOSFET N-CH 100V 13A/90A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 267W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 50 V.

Інші пропозиції AOB2918L

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
AOB2918L AOB2918L Виробник : Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 100V 13A/90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 267W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 50 V
товар відсутній
AOB2918L AOB2918L Виробник : Alpha & Omega Semiconductor Inc. AOSGreenPolicy.pdf Description: MOSFET N-CH 100V 13A/90A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 267W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 50 V
товар відсутній