Технічний опис AOB292L Alpha & Omega Semiconductor
Description: MOSFET N-CH 100V 105A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V.
Інші пропозиції AOB292L
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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AOB292L | Виробник : Alpha & Omega Semiconductor |
 Trans MOSFET N-CH 100V 105A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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AOB292L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 82A; 300W; TO263 Mounting: SMD Power dissipation: 300W Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 100V Drain current: 82A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET кількість в упаковці: 800 шт |
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AOB292L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 105A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V |
товар відсутній |
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AOB292L | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 105A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V |
товар відсутній |
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AOB292L | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 82A; 300W; TO263 Mounting: SMD Power dissipation: 300W Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 100V Drain current: 82A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET |
товар відсутній |