AOD2144

AOD2144 Alpha & Omega Semiconductor


685aod2144.pdf Виробник: Alpha & Omega Semiconductor
N-Channel MOSFET
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Технічний опис AOD2144 Alpha & Omega Semiconductor

Description: N, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 20 V.

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AOD2144 AOD2144 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOD2144.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 62W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 62W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
AOD2144 Виробник : Alpha & Omega Semiconductor Inc. AOD2144.pdf Description: N
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 20 V
товар відсутній
AOD2144 AOD2144 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOD2144.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 62W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 62W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhanced
товар відсутній