Технічний опис AOD2910E Alpha & Omega Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 26A; 35.5W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 26A, Power dissipation: 35.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 23mΩ, Mounting: SMD, Gate charge: 8nC, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 2500 шт.
Інші пропозиції AOD2910E
| Фото | Назва | Виробник | Інформація |
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AOD2910E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 26A; 35.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 26A Power dissipation: 35.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 8nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 2500 шт |
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AOD2910E | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 100V 37A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Supplier Device Package: TO-252 (DPAK) Part Status: Active |
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AOD2910E | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 26A; 35.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 26A Power dissipation: 35.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 8nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |