Технічний опис AOD409G Alpha & Omega Semiconductor
Description: P, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 60W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V.
Інші пропозиції AOD409G
| Фото | Назва | Виробник | Інформація |
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AOD409G | Виробник : Alpha & Omega Semiconductor |
 P-Channel Mosfet |
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AOD409G | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 24W; TO252 Mounting: SMD Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO252 Drain-source voltage: -60V Drain current: -18A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 24W кількість в упаковці: 2500 шт |
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| AOD409G | Виробник : Alpha & Omega Semiconductor Inc. |
Description: P Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V |
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AOD409G | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -18A; 24W; TO252 Mounting: SMD Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO252 Drain-source voltage: -60V Drain current: -18A On-state resistance: 40mΩ Type of transistor: P-MOSFET Power dissipation: 24W |
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