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AOD558 Alpha & Omega Semiconductor Inc.

Name: AOD558
Brand: ALPHA & OMEGA SEMICONDUCTOR
SKU: 453527801-1
Price: 15.02 UAH
Availability: BackOrder

Виробник: Alpha & Omega Semiconductor Inc.
Description: 30V N-CHANNEL MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V

на замовлення 2148 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
8+	41.16 грн
10+	33.94 грн
100+	23.6 грн
500+	17.3 грн
1000+	14.06 грн

Мінімальне замовлення: 8

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Технічний опис AOD558 Alpha & Omega Semiconductor Inc.

Description: 30V N-CHANNEL MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V.

Інші пропозиції AOD558

Назва	Виробник	Інформація	Доступність
AOD558	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 25W; TO252 Mounting: SMD Power dissipation: 25W Gate charge: 4.1nC Polarisation: unipolar Drain current: 39A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Case: TO252 On-state resistance: 5.4mΩ Gate-source voltage: ±20V кількість в упаковці: 1 шт	товар відсутній
AOD558	Виробник : Alpha & Omega Semiconductor Inc.	Description: 30V N-CHANNEL MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1187 pF @ 15 V	товар відсутній
AOD558	Виробник : ALPHA & OMEGA SEMICONDUCTOR	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 25W; TO252 Mounting: SMD Power dissipation: 25W Gate charge: 4.1nC Polarisation: unipolar Drain current: 39A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Case: TO252 On-state resistance: 5.4mΩ Gate-source voltage: ±20V	товар відсутній