AOD5B60D Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: IGBT 600V 10A 54.4W TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 12ns/82ns
Switching Energy: 140µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 9.4 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 54.4 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 32.42 грн |
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Технічний опис AOD5B60D Alpha & Omega Semiconductor Inc.
Description: IGBT 600V 10A 54.4W TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 98 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A, Supplier Device Package: TO-252 (DPAK), Td (on/off) @ 25°C: 12ns/82ns, Switching Energy: 140µJ (on), 40µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 9.4 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 54.4 W.
Інші пропозиції AOD5B60D
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Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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AOD5B60D | Виробник : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 10A 54400mW 3-Pin(2+Tab) DPAK T/R |
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AOD5B60D | Виробник : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 600V 23A 54.4W 3-Pin(2+Tab) DPAK T/R |
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AOD5B60D | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 5A; 21.7W; TO252; Eoff: 0.04mJ; Eon: 0.14mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 21.7W Case: TO252 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 9.4nC Kind of package: reel; tape Turn-on time: 27ns Turn-off time: 124ns Collector-emitter saturation voltage: 1.55V Turn-off switching energy: 0.04mJ Turn-on switching energy: 0.14mJ кількість в упаковці: 1 шт |
товар відсутній |
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AOD5B60D | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 5A; 21.7W; TO252; Eoff: 0.04mJ; Eon: 0.14mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 21.7W Case: TO252 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: SMD Gate charge: 9.4nC Kind of package: reel; tape Turn-on time: 27ns Turn-off time: 124ns Collector-emitter saturation voltage: 1.55V Turn-off switching energy: 0.04mJ Turn-on switching energy: 0.14mJ |
товар відсутній |