AOD5B65M1 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: IGBT 650V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 195 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Supplier Device Package: TO-252 (DPAK)
Td (on/off) @ 25°C: 8.5ns/106ns
Switching Energy: 80µJ (on), 70µJ (off)
Test Condition: 400V, 5A, 60Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 69 W
на замовлення 2355 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.27 грн |
| 10+ | 69.09 грн |
| 100+ | 53.83 грн |
| 500+ | 41.73 грн |
| 1000+ | 32.95 грн |
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Технічний опис AOD5B65M1 Alpha & Omega Semiconductor Inc.
Description: IGBT 650V 5A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 195 ns, Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A, Supplier Device Package: TO-252 (DPAK), Td (on/off) @ 25°C: 8.5ns/106ns, Switching Energy: 80µJ (on), 70µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 14 nC, Part Status: Active, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 15 A, Power - Max: 69 W.
Інші пропозиції AOD5B65M1
| Фото | Назва | Виробник | Інформація |
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AOD5B65M1 | Виробник : Alpha & Omega Semiconductor |
Trans IGBT Chip N-CH 650V 10A 69000mW 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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AOD5B65M1 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 5A; 28W; TO252; Eoff: 0.07mJ; Eon: 0.08mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 5A Power dissipation: 28W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 15A Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Turn-on time: 21ns Turn-off time: 157ns Collector-emitter saturation voltage: 1.57V Turn-off switching energy: 0.07mJ Turn-on switching energy: 0.08mJ кількість в упаковці: 1 шт |
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AOD5B65M1 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 650V 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 8.5ns/106ns Switching Energy: 80µJ (on), 70µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 69 W |
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AOD5B65M1 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 5A; 28W; TO252; Eoff: 0.07mJ; Eon: 0.08mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 5A Power dissipation: 28W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 15A Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Turn-on time: 21ns Turn-off time: 157ns Collector-emitter saturation voltage: 1.57V Turn-off switching energy: 0.07mJ Turn-on switching energy: 0.08mJ |
товар відсутній |