AOSD26313C ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: -30/30V
Drain current: 5.4/-4.4A
Power dissipation: 1.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 26/55mΩ
Gate charge: 33nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
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Технічний опис AOSD26313C ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Kind of transistor: complementary pair, Drain-source voltage: -30/30V, Drain current: 5.4/-4.4A, Power dissipation: 1.1W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 26/55mΩ, Gate charge: 33nC, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, кількість в упаковці: 1 шт.
Інші пропозиції AOSD26313C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AOSD26313C | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N/P-CH 30V 8-SOIC |
товар відсутній |
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AOSD26313C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: -30/30V Drain current: 5.4/-4.4A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 26/55mΩ Gate charge: 33nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |