AOSS21319C Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 2.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
Description: MOSFET P-CH 30V 2.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, SOT-23-3 Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.55 грн |
| 6000+ | 5.22 грн |
| 9000+ | 4.62 грн |
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Технічний опис AOSS21319C Alpha & Omega Semiconductor Inc.
Description: MOSFET P-CH 30V 2.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, SOT-23-3 Variant, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V.
Інші пропозиції AOSS21319C за ціною від 5.6 грн до 25.28 грн
| Фото | Назва | Виробник | Інформація |
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AOSS21319C | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET P-CH 30V 2.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V |
на замовлення 36304 шт: термін постачання 21-31 дні (днів) |
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| AOSS21319C | Виробник : Alpha & Omega Semiconductor |
 P-Channel MOSFET |
товар відсутній |
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AOSS21319C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5 шт |
товар відсутній |
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| AOSS21319C | Виробник : Alpha & Omega Semiconductor |
P-Channel MOSFET |
товар відсутній |
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AOSS21319C | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |