AOT13N50 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.5A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 510mΩ
Mounting: THT
Gate charge: 30.7nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.5A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 510mΩ
Mounting: THT
Gate charge: 30.7nC
Kind of channel: enhanced
на замовлення 1055 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 75.11 грн |
13+ | 62.59 грн |
36+ | 59.11 грн |
250+ | 56.33 грн |
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Технічний опис AOT13N50 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET N-CH 500V 13A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 510mOhm @ 6.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Інші пропозиції AOT13N50 за ціною від 67.6 грн до 107.85 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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AOT13N50 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.5A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.5A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 510mΩ Mounting: THT Gate charge: 30.7nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1055 шт: термін постачання 7-14 дні (днів) |
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AOT13N50 | Виробник : Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220 |
товар відсутній |
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AOT13N50 | Виробник : Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220 |
товар відсутній |
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AOT13N50 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET N-CH 500V 13A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 510mOhm @ 6.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
товар відсутній |