AOT5B60D ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 41.2W; TO220; Eoff: 0.04mJ; Eon: 0.14mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 41.2W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 9.4nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 95ns
Collector-emitter saturation voltage: 1.55V
Turn-off switching energy: 0.04mJ
Turn-on switching energy: 0.14mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 5A; 41.2W; TO220; Eoff: 0.04mJ; Eon: 0.14mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 5A
Power dissipation: 41.2W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 20A
Mounting: THT
Gate charge: 9.4nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 95ns
Collector-emitter saturation voltage: 1.55V
Turn-off switching energy: 0.04mJ
Turn-on switching energy: 0.14mJ
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
8+ | 47.18 грн |
9+ | 39.64 грн |
25+ | 36.86 грн |
Відгуки про товар
Написати відгук
Технічний опис AOT5B60D ALPHA & OMEGA SEMICONDUCTOR
Description: IGBT 600V 10A 82.4W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 98 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A, Supplier Device Package: TO-220, Td (on/off) @ 25°C: 12ns/83ns, Switching Energy: 140µJ (on), 40µJ (off), Test Condition: 400V, 5A, 60Ohm, 15V, Gate Charge: 9.4 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 20 A, Power - Max: 82.4 W.
Інші пропозиції AOT5B60D за ціною від 44.23 грн до 56.62 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
AOT5B60D | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 5A; 41.2W; TO220; Eoff: 0.04mJ; Eon: 0.14mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 5A Power dissipation: 41.2W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 20A Mounting: THT Gate charge: 9.4nC Kind of package: tube Turn-on time: 27ns Turn-off time: 95ns Collector-emitter saturation voltage: 1.55V Turn-off switching energy: 0.04mJ Turn-on switching energy: 0.14mJ кількість в упаковці: 1 шт |
на замовлення 59 шт: термін постачання 7-14 дні (днів) |
|
|||||||||
AOT5B60D | Виробник : Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 10A 82400mW 3-Pin(3+Tab) TO-220 Tube |
товар відсутній |
||||||||||
AOT5B60D | Виробник : Alpha & Omega Semiconductor Inc. |
Description: IGBT 600V 10A 82.4W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 98 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 12ns/83ns Switching Energy: 140µJ (on), 40µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 9.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 82.4 W |
товар відсутній |