AOW66412 Alpha & Omega Semiconductor


2125791295565873aow66412.pdf Виробник: Alpha & Omega Semiconductor
N-Channel MOSFET
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Технічний опис AOW66412 Alpha & Omega Semiconductor

Description: N, Packaging: Tape & Reel (TR), Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 260W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V.

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AOW66412 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOW66412.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 104W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 104W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 45nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
AOW66412 Виробник : Alpha & Omega Semiconductor Inc. AOW66412.pdf Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 260W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
товар відсутній
AOW66412 Виробник : ALPHA & OMEGA SEMICONDUCTOR AOW66412.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 104W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 104W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: THT
Gate charge: 45nC
Kind of channel: enhanced
товар відсутній