AOWF412 ALPHA & OMEGA SEMICONDUCTOR


AOWF412.pdf Виробник: ALPHA & OMEGA SEMICONDUCTOR
AOWF412 THT N channel transistors
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Технічний опис AOWF412 ALPHA & OMEGA SEMICONDUCTOR

Description: MOSFET N-CH 100V 7.8A/30A, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V, Power Dissipation (Max): 2.1W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: TO-262F, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V.

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AOWF412 AOWF412 Виробник : Alpha & Omega Semiconductor Inc. AOWF412.pdf Description: MOSFET N-CH 100V 7.8A/30A
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-262F
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
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