AOY66923 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 16.5/58A TO251B
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-251B
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V
на замовлення 5840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 57.87 грн |
| 70+ | 44.6 грн |
| 140+ | 35.35 грн |
| 560+ | 28.12 грн |
| 1050+ | 27.81 грн |
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Технічний опис AOY66923 Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 100V 16.5/58A TO251B, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Power Dissipation (Max): 6.2W (Ta), 73W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: TO-251B, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V.
Інші пропозиції AOY66923
| Фото | Назва | Виробник | Інформація |
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AOY66923 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 16.5A; 6.2W; IPAK Mounting: THT Drain-source voltage: 100V Drain current: 16.5A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 6.2W Polarisation: unipolar Gate charge: 35nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: IPAK кількість в упаковці: 1 шт |
товар відсутній |
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AOY66923 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 16.5A; 6.2W; IPAK Mounting: THT Drain-source voltage: 100V Drain current: 16.5A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 6.2W Polarisation: unipolar Gate charge: 35nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: IPAK |
товар відсутній |