Технічний опис APT10025JVFR Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 34A, Pulsed drain current: 136A, Power dissipation: 700W, Case: ISOTOP, Gate-source voltage: ±30V, On-state resistance: 0.25Ω, Kind of channel: enhanced, Semiconductor structure: single transistor, Electrical mounting: screw, Mechanical mounting: screw, Type of module: MOSFET transistor, кількість в упаковці: 1 шт.
Інші пропозиції APT10025JVFR
Фото | Назва | Виробник | Інформація |
Доступність |
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APT10025JVFR | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 34A Pulsed drain current: 136A Power dissipation: 700W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.25Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT10025JVFR | Виробник : Microchip Technology | Discrete Semiconductor Modules FREDFET MOS5 1000 V 250 mOhm SOT-227 |
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APT10025JVFR | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 34A Pulsed drain current: 136A Power dissipation: 700W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.25Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |