Технічний опис APT10026JLL Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W, Technology: POWER MOS 7®, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 30A, Pulsed drain current: 120A, Power dissipation: 595W, Case: ISOTOP, Gate-source voltage: ±30V, On-state resistance: 0.26Ω, Kind of channel: enhanced, Semiconductor structure: single transistor, Electrical mounting: screw, Mechanical mounting: screw, Type of module: MOSFET transistor, кількість в упаковці: 1 шт.
Інші пропозиції APT10026JLL
Фото | Назва | Виробник | Інформація |
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APT10026JLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.26Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor кількість в упаковці: 1 шт |
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APT10026JLL | Виробник : Microchip Technology | Discrete Semiconductor Modules MOSFET MOS7 1000 V 260 mOhm SOT-227 |
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APT10026JLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 120A Power dissipation: 595W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.26Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
товар відсутній |