APT1003RKLLG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис APT1003RKLLG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3, Type of transistor: N-MOSFET, Technology: POWER MOS 7®, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 4A, Pulsed drain current: 16A, Power dissipation: 139W, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 3Ω, Mounting: THT, Gate charge: 34nC, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції APT1003RKLLG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| APT1003RKLLG | Виробник : Microchip / Microsemi | Discrete Semiconductor Modules FG, MOSFET, 1000V, TO-220, RoHS |
товар відсутній |
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APT1003RKLLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 139W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Gate charge: 34nC Kind of channel: enhanced |
товар відсутній |