Технічний опис APT12M80B Microchip Technology
Description: MOSFET N-CH 800V 13A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V, Power Dissipation (Max): 335W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V.
Інші пропозиції APT12M80B
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APT12M80B | Виробник : MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3 On-state resistance: 0.8Ω Type of transistor: N-MOSFET Power dissipation: 335W Polarisation: unipolar Mounting: THT Gate charge: 80nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247-3 Pulsed drain current: 45A Drain-source voltage: 800V Drain current: 8A кількість в упаковці: 1 шт |
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APT12M80B | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 13A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 6A, 10V Power Dissipation (Max): 335W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-247 [B] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V |
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APT12M80B | Виробник : Microchip Technology |
MOSFET FG, MOSFET, 800V, TO-247 |
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APT12M80B | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 45A; 335W; TO247-3 On-state resistance: 0.8Ω Type of transistor: N-MOSFET Power dissipation: 335W Polarisation: unipolar Mounting: THT Gate charge: 80nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Case: TO247-3 Pulsed drain current: 45A Drain-source voltage: 800V Drain current: 8A |
товар відсутній |