Технічний опис APT13003LZTR-G1 Diodes Inc
Description: TRANS NPN 450V 0.8A TO92, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 40mA, 200mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 300mA, 10V, Supplier Device Package: TO-92, Part Status: Obsolete, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 450 V, Power - Max: 800 mW.
Інші пропозиції APT13003LZTR-G1
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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APT13003LZTR-G1 | Виробник : Diodes Incorporated |
Description: TRANS NPN 450V 0.8A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 40mA, 200mA DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 300mA, 10V Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 800 mW |
товар відсутній |
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APT13003LZTR-G1 | Виробник : Diodes Incorporated |
 Bipolar Transistors - BJT 465V NPN High Volt 700Vces 450Vceo |
товар відсутній |