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AS6C8016-55TINTR ALLIANCE MEMORY


Alliance_Selection_Guide _Print2024.pdf Виробник: ALLIANCE MEMORY
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
кількість в упаковці: 1500 шт
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Технічний опис AS6C8016-55TINTR ALLIANCE MEMORY

Description: IC SRAM 8MBIT PARALLEL 48TSOP I, Packaging: Tape & Reel (TR), Package / Case: 48-TFSOP (0.724", 18.40mm Width), Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 5.5V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TSOP I, Write Cycle Time - Word, Page: 55ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 512K x 16, DigiKey Programmable: Not Verified.

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AS6C8016-55TINTR AS6C8016-55TINTR Виробник : Alliance Memory, Inc. 8M_AS6C8016-55TIN_Alliance%20Memory%20v1.0%20Nov%202015.pdf Description: IC SRAM 8MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
товар відсутній
AS6C8016-55TINTR AS6C8016-55TINTR Виробник : Alliance Memory 8M_AS6C8016_55TIN_Alliance_Memory_v1_0_Nov_2015-1265245.pdf SRAM 8M L-Power, 2.7-3.6V 512k x 16, 48pin
товар відсутній
AS6C8016-55TINTR Виробник : ALLIANCE MEMORY Alliance_Selection_Guide _Print2024.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.7÷3.6V; 55ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP48
Mounting: SMD
Integrated circuit features: LPC
Operating voltage: 2.7...3.6V
товар відсутній