BCR 48PN H6727

BCR 48PN H6727 Infineon Technologies


bcr48pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406c1ce60300 Виробник: Infineon Technologies
Description: TRANS NPN/PNP PREBIAS SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 70mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz, 200MHz
Resistor - Base (R1): 47kOhms, 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-PO
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Технічний опис BCR 48PN H6727 Infineon Technologies

Description: TRANS NPN/PNP PREBIAS SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 70mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Frequency - Transition: 100MHz, 200MHz, Resistor - Base (R1): 47kOhms, 2.2kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: PG-SOT363-PO.

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BCR 48PN H6727 BCR 48PN H6727 Виробник : Infineon Technologies bcr48pn-73649.pdf Bipolar Transistors - Pre-Biased NPN/PNP Silicon Digi Transistor Array
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