BCX51E6327

BCX51E6327 Infineon Technologies


bcx51_bcx52_bcx53.pdf Виробник: Infineon Technologies
Trans GP BJT PNP 45V 1A 2000mW Automotive 4-Pin(3+Tab) SOT-89 T/R
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Технічний опис BCX51E6327 Infineon Technologies

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V, Frequency - Transition: 125MHz, Supplier Device Package: PG-SOT89-4-2, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 2 W, Grade: Automotive, Qualification: AEC-Q101.

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BCX51E6327 BCX51E6327 Виробник : Infineon Technologies INFNS12465-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89-4-2
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
Grade: Automotive
Qualification: AEC-Q101
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BCX 51 E6327 BCX 51 E6327 Виробник : Infineon Technologies bcx51_bcx52_bcx53-85752.pdf Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
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