BF5030WH6327XTSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: FET RF 8V 800MHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 24dB
Technology: MOSFET
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT343-4-1
Voltage - Rated: 8 V
Voltage - Test: 3 V
Current - Test: 10 mA
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Технічний опис BF5030WH6327XTSA1 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 8V; 25mA; 200mW; SOT343; SMT, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of transistor: RF, Drain-source voltage: 8V, Drain current: 25mA, Power dissipation: 0.2W, Case: SOT343, Gate-source voltage: ±6V, Kind of package: reel; tape, Frequency: 800MHz, Kind of channel: depleted, Features of semiconductor devices: dual gate, Electrical mounting: SMT, Open-loop gain: 24dB.
Інші пропозиції BF5030WH6327XTSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BF5030WH6327XTSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; RF; 8V; 25mA; 200mW; SOT343; SMT Type of transistor: N-MOSFET Polarisation: unipolar Kind of transistor: RF Drain-source voltage: 8V Drain current: 25mA Power dissipation: 0.2W Case: SOT343 Gate-source voltage: ±6V Kind of package: reel; tape Frequency: 800MHz Kind of channel: depleted Features of semiconductor devices: dual gate Electrical mounting: SMT Open-loop gain: 24dB |
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