BFP620E7764BTSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: RF TRANS NPN 2.8V 65GHZ SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21.5dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
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Технічний опис BFP620E7764BTSA1 Infineon Technologies
Description: RF TRANS NPN 2.8V 65GHZ SOT343-4, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 21.5dB, Power - Max: 185mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 2.8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V, Frequency - Transition: 65GHz, Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz, Supplier Device Package: PG-SOT343-3D, Part Status: Obsolete.
Інші пропозиції BFP620E7764BTSA1
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BFP620E7764BTSA1 | Виробник : Infineon Technologies |
Description: RF TRANS NPN 2.8V 65GHZ SOT343-4 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21.5dB Power - Max: 185mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 2.8V DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Supplier Device Package: PG-SOT343-3D Part Status: Obsolete |
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