BGH75N120HF1 BASiC SEMICONDUCTOR
Виробник: BASiC SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3
Type of transistor: IGBT
Technology: Field Stop; SiC SBD; Trench
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 568W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 398nC
Kind of package: tube
Turn-on time: 140ns
Turn-off time: 443ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
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Технічний опис BGH75N120HF1 BASiC SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3, Type of transistor: IGBT, Technology: Field Stop; SiC SBD; Trench, Collector-emitter voltage: 1.2kV, Collector current: 75A, Power dissipation: 568W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 200A, Mounting: THT, Gate charge: 398nC, Kind of package: tube, Turn-on time: 140ns, Turn-off time: 443ns, Features of semiconductor devices: integrated anti-parallel diode, кількість в упаковці: 1 шт.
Інші пропозиції BGH75N120HF1
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BGH75N120HF1 | Виробник : BASiC SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; SiC SBD; 1.2kV; 75A; 568W; TO247-3 Type of transistor: IGBT Technology: Field Stop; SiC SBD; Trench Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 568W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 398nC Kind of package: tube Turn-on time: 140ns Turn-off time: 443ns Features of semiconductor devices: integrated anti-parallel diode |
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