Технічний опис BSB015N04NX3GXUMA1 Infineon Technologies
Description: MOSFET N-CH 40V 36A/180A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V.
Інші пропозиції BSB015N04NX3GXUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
BSB015N04NX3GXUMA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Mounting: SMD Power dissipation: 89W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: CanPAK™ MX; MG-WDSON-2 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET кількість в упаковці: 5000 шт |
товар відсутній |
|
 |
BSB015N04NX3GXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 36A/180A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
товар відсутній |
|
|
|
BSB015N04NX3GXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 36A/180A 2WDSON Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
товар відсутній |
|
 |
BSB015N04NX3GXUMA1 | Виробник : Infineon Technologies |
MOSFET TRENCH <= 40V |
товар відсутній |
|
|
|
BSB015N04NX3GXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Mounting: SMD Power dissipation: 89W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Case: CanPAK™ MX; MG-WDSON-2 Drain-source voltage: 40V Drain current: 180A On-state resistance: 1.5mΩ Type of transistor: N-MOSFET |
товар відсутній |