на замовлення 3564 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.28 грн |
| 10+ | 134.02 грн |
| 100+ | 91.23 грн |
| 500+ | 75.25 грн |
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Технічний опис BSB104N08NP3GXUSA1 Infineon Technologies
Description: MOSFET N-CH 80V 13A/50A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V, Power Dissipation (Max): 2.8W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 40µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V.
Інші пропозиції BSB104N08NP3GXUSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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BSB104N08NP3GXUSA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W Mounting: SMD Case: CanPAK™ M; MG-WDSON-2 Type of transistor: N-MOSFET Power dissipation: 48W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 32A On-state resistance: 10.4mΩ кількість в упаковці: 5000 шт |
товар відсутній |
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BSB104N08NP3GXUSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 80V 13A/50A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V Power Dissipation (Max): 2.8W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V |
товар відсутній |
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BSB104N08NP3GXUSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W Mounting: SMD Case: CanPAK™ M; MG-WDSON-2 Type of transistor: N-MOSFET Power dissipation: 48W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 32A On-state resistance: 10.4mΩ |
товар відсутній |