BSB165N15NZ3GXUMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 150V 9A/45A 2WDSON
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V
на замовлення 6048 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 156+ | 127.72 грн |
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Технічний опис BSB165N15NZ3GXUMA1 Infineon Technologies
Description: MOSFET N-CH 150V 9A/45A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 110µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V.
Інші пропозиції BSB165N15NZ3GXUMA1 за ціною від 107.88 грн до 263.38 грн
| Фото | Назва | Виробник | Інформація |
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BSB165N15NZ3GXUMA1 | Виробник : Infineon Technologies |
MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3 |
на замовлення 1526 шт: термін постачання 21-30 дні (днів) |
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BSB165N15NZ3GXUMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R |
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BSB165N15NZ3GXUMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R |
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BSB165N15NZ3GXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W Drain-source voltage: 150V Drain current: 45A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: CanPAK™ MZ; MG-WDSON-2 кількість в упаковці: 5000 шт |
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BSB165N15NZ3GXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 150V 9A/45A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V |
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BSB165N15NZ3GXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 150V 9A/45A 2WDSON Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 75 V |
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BSB165N15NZ3GXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W Drain-source voltage: 150V Drain current: 45A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: CanPAK™ MZ; MG-WDSON-2 |
товар відсутній |