BSB280N15NZ3GXUMA1 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIESCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 30A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5000 шт
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Технічний опис BSB280N15NZ3GXUMA1 INFINEON TECHNOLOGIES
Description: MOSFET N-CH 150V 9A/30A 2WDSON, Packaging: Tape & Reel (TR), Package / Case: 3-WDSON, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V, Power Dissipation (Max): 2.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 4V @ 60µA, Supplier Device Package: MG-WDSON-2, CanPAK M™, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V.
Інші пропозиції BSB280N15NZ3GXUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BSB280N15NZ3GXUMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R |
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BSB280N15NZ3GXUMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 150V 9A Automotive 7-Pin WDSON T/R |
товар відсутній |
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BSB280N15NZ3GXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 150V 9A/30A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V |
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BSB280N15NZ3GXUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 150V 9A/30A 2WDSON Packaging: Cut Tape (CT) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V |
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BSB280N15NZ3GXUMA1 | Виробник : Infineon Technologies |
MOSFET TRENCH >=100V |
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BSB280N15NZ3GXUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 30A; 57W Mounting: SMD Case: CanPAK™ MZ; MG-WDSON-2 Drain-source voltage: 150V Drain current: 30A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |